- 您現在的位置：買賣IC網 > PDF目錄371126 > MMT10V275 (MOTOROLA INC) Hook-Up Wire; Conductor Size AWG:24; No. Strands x Strand Size:19 x 36; Jacket Color:Black; Approval Bodies:UL; Approval Categories:UL AWM Style 1180; Passes VW-1 Flame Test; Cable/Wire MIL SPEC:MIL-W-16878/5 Type EE RoHS Compliant: Yes PDF資料下載
參數資料
| 型號： | MMT10V275 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 浪涌電流限制器 |
| 英文描述： | Hook-Up Wire; Conductor Size AWG:24; No. Strands x Strand Size:19 x 36; Jacket Color:Black; Approval Bodies:UL; Approval Categories:UL AWM Style 1180; Passes VW-1 Flame Test; Cable/Wire MIL SPEC:MIL-W-16878/5 Type EE RoHS Compliant: Yes |
| 中文描述： | 275 V, 100 A, SILICON SURGE PROTECTOR |
| 封裝： | CASE 416A-01, 2 PIN |
| 文件頁數： | 3/4頁 |
| 文件大小： | 90K |
| 代理商： | MMT10V275 |
3
Motorola Thyristor Device Data
Figure 2. Typical Holding Current
TJ, JUNCTION TEMPERATURE (
°
C)
80
70
60
50
40
30
20
10
0
600
550
500
450
400
350
300
250
200
I
Figure 3. Holding Current Temperature Coefficient
IH, HOLDING CURRENT AT 0
°
C (mA)
250
200
0
–1
–2
–3
–4
300
400
350
450
550
500
600
TYPICAL LOW
TYPICAL
I
T
°
Figure 4. Normalized Maximum 60 Hz VBO
versus Junction Temperature
TJ, JUNCTION TEMPERATURE (
°
C)
140
120
100
80
60
40
20
0
–20
1.2
1.15
0.9
N
Figure 5. Temperature Dependence of 60 Hz
Breakover Current
TJ, JUNCTION TEMPERATURE PRIOR TO TEST (
°
C)
10
1
0.1
1.1
1.05
1
0.95
The thermal coefficient of VF(BR) is similar to that of a zener
diode. IBO falls with temperature, reducing the zener
impedance contribution to VBO. This causes the VBO
temperature coefficient perature to be less than or equal to the
VF(BR) coefficient. The graph allows the estimation of the
maximum voltage rise of either parameter.
NORMALIZED
TO 25
°
C
140
120
100
80
60
40
20
0
–40
–20
160
I
Note: The behavior of the breakover current during AC operation
is complex, due to junction heating, case heating and thermal
interaction between the device halves. Microplasma conduction
at the beginning of breakdown sometimes results in higher local
current densities and earlier than predicted switching. This
reduces power dissipation and stress on the device.
MAXIMUM IBO = 1.0 A
at 25
°
C
MINIMUM IBO UNIT
FIRST HALF–CYCLE
f = 60 Hz
VOC = 1000 V (rms)
IOC = 1.0 A (rms)
相關PDF資料 |
PDF描述 |
|---|---|
| MMT10V400 | Photoelectric Sensor; Sensor Input Type:Optical; Sensing Range Max:0.5m; Sensor Output:NPN LO; Switch Terminals:Quick Connect; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Sensing Mode:Diffuse |
| MMT2907 | GENERAL PURPOSE TRANSISTOR |
| MMT3960A | RF AND HIGH-SPEED SWITCHING TRANSSITOR |
| MMUN2112LT1 | PNP SILICON BIAS RESISTOR TRANSISTOR |
| MMUN2111LT1 | PNP SILICON BIAS RESISTOR TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MMT10V400 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:BIDIRECTIONAL THYRISTOR SURGE SUPPRESSORS 25 WATTS STEADY STATE |
| MMT-110-01-F-DH | 制造商:Samtec Inc 功能描述:CONN UNSHRD HDR HDR 20 POS 2MM SLDR RA SMD - Bulk |
| MMT-110-01-F-DH-005 | 制造商:Samtec Inc 功能描述:CONN UNSHRD HDR HDR 20 POS 2MM SLDR RA SMD - Bulk |
| MMT-110-01-F-DH-A | 制造商:Samtec Inc 功能描述:CONN UNSHRD HDR HDR 20 POS 2MM SLDR RA SMD - Bulk |
| MMT-110-01-F-DH-K | 制造商:Samtec Inc 功能描述:2MM SMT STRIPS - Bulk |
發布緊急采購，3分鐘左右您將得到回復。