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參數資料
| 型號： | MMT10B230T3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 浪涌電流限制器 |
| 英文描述： | Thyristor Surge Protectors |
| 中文描述： | 265 V, SILICON SURGE PROTECTOR, DO-214AA |
| 封裝： | CASE 403C, SMT, SMB, 2 PIN |
| 文件頁數： | 2/6頁 |
| 文件大小： | 48K |
| 代理商： | MMT10B230T3 |
MMT10B230T3, MMT10B260T3, MMT10B310T3
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Operating Temperature Range
Blocking or Conducting State
T
J1
40 to +125
°
C
Overload Junction Temperature Maximum Conducting State Only
T
J2
+175
°
C
Instantaneous Peak Power Dissipation (I
pk
= 100 A, 10x1000
μ
sec @ 25
°
C)
P
PK
4000
W
Maximum Lead Temperature for Soldering Purposes 1/8
″
from Case for 10 Seconds
T
L
260
°
C
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Devices are bidirectional. All electrical parameters apply to forward and reverse polarities.
Characteristic
Symbol
Min
Typ
Max
Unit
Breakover Voltage (Both polarities)
(dv/dt = 100 V/
μ
s, I
SC
= 1.0 A, Vdc = 1000 V)
MMT10B230T3
MMT10B260T3
MMT10B310T3
(+65
°
C)
MMT10B230T3
MMT10B260T3
MMT10B310T3
V
(BO)
265
320
365
290
340
400
Volts
Breakover Voltage (Both polarities)
(f = 60 Hz, I
SC
= 1.0 A(rms), V
OC
= 1000 V(rms),
R
I
= 1.0 k
, t = 0.5 cycle) (Note 3.)
MMT10B230T3
MMT10B260T3
MMT10B310T3
(+65
°
C)
MMT10B230T3
MMT10B260T3
MMT10B310T3
V
(BO)
265
320
365
290
340
400
Volts
Breakover Voltage Temperature Coefficient
dV
(BO)
/dT
J
0.08
%/
°
C
Breakdown Voltage (I
(BR)
= 1.0 mA) Both polarities
MMT10B230T3
MMT10B260T3
MMT10B310T3
V
(BR)
190
240
280
Volts
Off State Current (V
D1
= 50 V) Both polarities
Off State Current
(V
D2
= V
DM
) Both polarities
I
D1
I
D2
2.0
5.0
μ
A
OnState Voltage (I
T
= 1.0 A)
(PW
≤
300
μ
s, Duty Cycle
≤
2%) (Note 3.)
V
T
1.53
5.0
Volts
Breakover Current (f = 60 Hz, V
DM
= 1000 V(rms), R
S
= 1.0 k
)
Both polarities
I
BO
260
mA
Holding Current (Both polarities)
V
S
= 500 Volts; I
T
(Initiating Current) =
(Note 3.)
1.0 A
I
H
150
270
mA
Critical Rate of Rise of OffState Voltage
(Linear waveform, V
D
= Rated V
BR
, T
J
= 25
°
C)
dv/dt
2000
V/
μ
s
Capacitance (f = 1.0 MHz, 50 Vdc, 1.0 V rms Signal)
Capacitance
(f = 1.0 MHz, 2.0 Vdc, 15 mV rms Signal)
C
O
65
160
200
pF
3. Measured under pulse conditions to reduce heating.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MMT10B230T3_05 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Thyristor Surge Protectors High Voltage Bidirectional TSPD |
| MMT10B230T3G | 功能描述:硅對稱二端開關元件 100A Surge 265V RoHS:否 制造商:Bourns 轉折電流 VBO:40 V 最大轉折電流 IBO:800 mA 不重復通態電流: 額定重復關閉狀態電壓 VDRM:25 V 關閉狀態漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態電壓:5 V 關閉狀態電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA |
| MMT10B260T3 | 功能描述:硅對稱二端開關元件 100A Surge 320V RoHS:否 制造商:Bourns 轉折電流 VBO:40 V 最大轉折電流 IBO:800 mA 不重復通態電流: 額定重復關閉狀態電壓 VDRM:25 V 關閉狀態漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態電壓:5 V 關閉狀態電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA |
| MMT10B260T3G | 功能描述:硅對稱二端開關元件 100A Surge 320V RoHS:否 制造商:Bourns 轉折電流 VBO:40 V 最大轉折電流 IBO:800 mA 不重復通態電流: 額定重復關閉狀態電壓 VDRM:25 V 關閉狀態漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態電壓:5 V 關閉狀態電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA |
| MMT10B310T3 | 功能描述:硅對稱二端開關元件 100A Surge 365V RoHS:否 制造商:Bourns 轉折電流 VBO:40 V 最大轉折電流 IBO:800 mA 不重復通態電流: 額定重復關閉狀態電壓 VDRM:25 V 關閉狀態漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態電壓:5 V 關閉狀態電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA |
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