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參數資料
| 型號： | MMT10B310T3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 浪涌電流限制器 |
| 英文描述： | Thyristor Surge Protectors |
| 中文描述： | 365 V, SILICON SURGE PROTECTOR, DO-214AA |
| 封裝： | CASE 403C, SMT, SMB, 2 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 48K |
| 代理商： | MMT10B310T3 |
Semiconductor Components Industries, LLC, 2004
March, 2004 Rev. 7
1
Publication Order Number:
MMT10B230T3/D
MMT10B230T3,
MMT10B260T3,
MMT10B310T3
Preferred Device
Thyristor Surge Protectors
High Voltage Bidirectional TSPD
These Thyristor Surge Protective devices (TSPD) prevent
overvoltage damage to sensitive circuits by lightning, induction and
power line crossings. They are breakovertriggered crowbar
protectors. Turnoff occurs when the surge current falls below the
holding current value.
Secondary protection applications for electronic telecom equipment
at customer premises.
Outstanding High Surge Current Capability: 100 Amps 10x1000
μ
sec
Guaranteed at the extended temp range of 20
°
C to 65
°
C
The MMT10B230T3 Series is used to help equipment meet various
regulatory requirements including: Bellcore 1089, ITU K.20 & K.21,
IEC 950, UL 1459 & 1950 and FCC Part 68.
Bidirectional Protection in a Single Device
Little Change of Voltage Limit with Transient Amplitude or Rate
Freedom from Wearout Mechanisms Present in NonSemiconductor
Devices
FailSafe, Shorts When Overstressed, Preventing Continued
Unprotected Operation.
Surface Mount Technology (SMT)
Complies with GR1089 Second Level Surge Spec at 500 Amps
2x10
μ
sec Waveforms
Indicates UL Registered File #E210057
Device Marking: MMT10B230T3: RPDF; MMT10B260T3: RPDG;
MMT10B310T3: RPDJ, and Date Code
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
OffState Voltage Maximum
MMT10B230T3
MMT10B260T3
MMT10B310T3
V
DM
170
200
270
Volts
Maximum Pulse Surge Short Circuit
Current NonRepetitive
Double Exponential Decay Waveform
(Notes 1. and 2.) (20
°
C to +65
°
C)
2 x 10
μ
sec
10 x 700
μ
sec
10 x 1000
μ
sec
I
PPS1
I
PPS2
I
PPS3
500
180
100
A(pk)
Maximum NonRepetitive Rate of
Change of OnState Current
Double Exponential Waveform,
R = 2.0, L = 1.5
μ
H, C = 1.67
μ
F,
I
pk
= 110A
1. Allow cooling before testing second polarity.
2. Measured under pulse conditions to reduce heating.
di/dt
100
A/
μ
s
BIDIRECTIONAL TSPD
100 AMP SURGE
265 thru 365 VOLTS
Preferred
devices are recommended choices for future use
and best overall value.
Device
Package
Shipping
ORDERING INFORMATION
MMT10B230T3
SMB
12mm Tape and Reel
(2.5K/Reel)
MMT10B260T3
SMB
12mm Tape and Reel
(2.5K/Reel)
MMT10B310T3
SMB
12mm Tape and Reel
(2.5K/Reel)
MT1
MT2
SMB
(No Polarity)
(Essentially JEDEC DO214AA)
CASE 403C
(
)
RPDx
x
Y
WW
= Specific Device Code
= F, G or J
= Year
= Work Week
MARKING DIAGRAMS
YWW
RPDx
http://onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MMT10B310T3G | 功能描述:硅對稱二端開關元件 100A Surge 365V RoHS:否 制造商:Bourns 轉折電流 VBO:40 V 最大轉折電流 IBO:800 mA 不重復通態電流: 額定重復關閉狀態電壓 VDRM:25 V 關閉狀態漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態電壓:5 V 關閉狀態電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA |
| MMT10B350T3 | 功能描述:硅對稱二端開關元件 100A Surge 400V RoHS:否 制造商:Bourns 轉折電流 VBO:40 V 最大轉折電流 IBO:800 mA 不重復通態電流: 額定重復關閉狀態電壓 VDRM:25 V 關閉狀態漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態電壓:5 V 關閉狀態電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA |
| MMT10B350T3G | 功能描述:硅對稱二端開關元件 100A Surge 400V RoHS:否 制造商:Bourns 轉折電流 VBO:40 V 最大轉折電流 IBO:800 mA 不重復通態電流: 額定重復關閉狀態電壓 VDRM:25 V 關閉狀態漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態電壓:5 V 關閉狀態電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA |
| MMT10-M | 制造商:Tamura Corporation of America 功能描述: |
| MMT10V260G | 功能描述:硅對稱二端開關元件 THY SIDAC SPECIAL SSOVP RoHS:否 制造商:Bourns 轉折電流 VBO:40 V 最大轉折電流 IBO:800 mA 不重復通態電流: 額定重復關閉狀態電壓 VDRM:25 V 關閉狀態漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態電壓:5 V 關閉狀態電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA |
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