- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄382343 > MMT10B310T3 (ON SEMICONDUCTOR) Thyristor Surge Protectors PDF資料下載
參數(shù)資料
| 型號： | MMT10B310T3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 浪涌電流限制器 |
| 英文描述： | Thyristor Surge Protectors |
| 中文描述： | 365 V, SILICON SURGE PROTECTOR, DO-214AA |
| 封裝： | CASE 403C, SMT, SMB, 2 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 48K |
| 代理商： | MMT10B310T3 |
MMT10B230T3, MMT10B260T3, MMT10B310T3
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Operating Temperature Range
Blocking or Conducting State
T
J1
40 to +125
°
C
Overload Junction Temperature Maximum Conducting State Only
T
J2
+175
°
C
Instantaneous Peak Power Dissipation (I
pk
= 100 A, 10x1000
μ
sec @ 25
°
C)
P
PK
4000
W
Maximum Lead Temperature for Soldering Purposes 1/8
″
from Case for 10 Seconds
T
L
260
°
C
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Devices are bidirectional. All electrical parameters apply to forward and reverse polarities.
Characteristic
Symbol
Min
Typ
Max
Unit
Breakover Voltage (Both polarities)
(dv/dt = 100 V/
μ
s, I
SC
= 1.0 A, Vdc = 1000 V)
MMT10B230T3
MMT10B260T3
MMT10B310T3
(+65
°
C)
MMT10B230T3
MMT10B260T3
MMT10B310T3
V
(BO)
265
320
365
290
340
400
Volts
Breakover Voltage (Both polarities)
(f = 60 Hz, I
SC
= 1.0 A(rms), V
OC
= 1000 V(rms),
R
I
= 1.0 k
, t = 0.5 cycle) (Note 3.)
MMT10B230T3
MMT10B260T3
MMT10B310T3
(+65
°
C)
MMT10B230T3
MMT10B260T3
MMT10B310T3
V
(BO)
265
320
365
290
340
400
Volts
Breakover Voltage Temperature Coefficient
dV
(BO)
/dT
J
0.08
%/
°
C
Breakdown Voltage (I
(BR)
= 1.0 mA) Both polarities
MMT10B230T3
MMT10B260T3
MMT10B310T3
V
(BR)
190
240
280
Volts
Off State Current (V
D1
= 50 V) Both polarities
Off State Current
(V
D2
= V
DM
) Both polarities
I
D1
I
D2
2.0
5.0
μ
A
OnState Voltage (I
T
= 1.0 A)
(PW
≤
300
μ
s, Duty Cycle
≤
2%) (Note 3.)
V
T
1.53
5.0
Volts
Breakover Current (f = 60 Hz, V
DM
= 1000 V(rms), R
S
= 1.0 k
)
Both polarities
I
BO
260
mA
Holding Current (Both polarities)
V
S
= 500 Volts; I
T
(Initiating Current) =
(Note 3.)
1.0 A
I
H
150
270
mA
Critical Rate of Rise of OffState Voltage
(Linear waveform, V
D
= Rated V
BR
, T
J
= 25
°
C)
dv/dt
2000
V/
μ
s
Capacitance (f = 1.0 MHz, 50 Vdc, 1.0 V rms Signal)
Capacitance
(f = 1.0 MHz, 2.0 Vdc, 15 mV rms Signal)
C
O
65
160
200
pF
3. Measured under pulse conditions to reduce heating.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMUN2134LT1 | PNP SILICON BIAS RESISTOR TRANSISTOR |
| MMUN5233DW1T1 | Dual Bias Resistor Trasnsistors |
| MMVL105GT1 | VOLTAGE VARIABLE CAPACITANCE DIODE |
| MMVL105GT1 | Silicon Tuning Diode |
| MMVL109T1G | Silicon Epicap Diodes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMT10B310T3G | 功能描述:硅對稱二端開關(guān)元件 100A Surge 365V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA |
| MMT10B350T3 | 功能描述:硅對稱二端開關(guān)元件 100A Surge 400V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA |
| MMT10B350T3G | 功能描述:硅對稱二端開關(guān)元件 100A Surge 400V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA |
| MMT10-M | 制造商:Tamura Corporation of America 功能描述: |
| MMT10V260G | 功能描述:硅對稱二端開關(guān)元件 THY SIDAC SPECIAL SSOVP RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。