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參數資料
型號: MOC3052V-M
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 光電耦合器
英文描述: 6-PIN DIP RANDOM-PHASE OPTOISOLATORS TRIAC DRIVERS (600 VOLT PEAK)
中文描述: 1 CHANNEL TRIAC OUTPUT OPTOCOUPLER
封裝: DIP-6
文件頁數: 4/8頁
文件大小: 329K
代理商: MOC3052V-M
4
Motorola Optoelectronics Device Data
Figure 6. Holding Current, IH
versus Temperature
TA, AMBIENT TEMPERATURE (
°
C)
–40
1
0.9
0
–30 –20 –10
0
10
20
30
40
50
60
70
80
I
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Figure 7. Leakage Current, IDRM
versus Temperature
TA, AMBIENT TEMPERATURE (
°
C)
–40
100
1
–30 –20 –10
0
10
20
30
40
50
60
70
80
10
I
TYPICAL ELECTRICAL CHARACTERISTICS
TA = 25
°
C
Figure 8. ED Trigger Current, IFT, versus dv/dt
dv/dt (V/
μ
s)
0.001
1.5
0.5
10000
NORMALIZED TO:
IFT at 3 V
I
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
0.01
0.1
1
10
100
1000
IFT versus dv/dt
Triac drivers with good noise immunity (dv/dt static) have
internal noise rejection circuits which prevent false triggering
of the device in the event of fast raising line voltage tran-
sients. Inductive loads generate a commutating dv/dt that
may activate the triac drivers noise suppression circuits. This
prevents the device from turning on at its specified trigger
current. It will in this case go into the mode of “half waving” of
the load. Half waving of the load may destroy the power triac
and the load.
Figure 8 shows the dependency of the triac drivers IFT ver-
sus the reapplied voltage rise with a Vp of 400 V. This dv/dt
condition simulates a worst case commutating dv/dt ampli-
tude.
It can be seen that the IFT does not change until a commu-
tating dv/dt reaches 1000 V/
μ
s. Practical loads generate a
commutating dv/dt of less than 50 V/
μ
s. The data sheet spe-
cified IFT is therefore applicable for all practical inductive
loads and load factors.
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