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參數(shù)資料
型號(hào): MP4503
廠商: Toshiba Corporation
英文描述: High Power Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching
中文描述: 高功率開關(guān)應(yīng)用錘驅(qū)動(dòng)器,步進(jìn)電機(jī)驅(qū)動(dòng)器和感性負(fù)載開關(guān)
文件頁數(shù): 1/8頁
文件大?。?/td> 191K
代理商: MP4503
MP4503
2002-11-20
1
TOSHIBA Power Transistor Module Silicon NPN&PNP Epitaxial Type (Darlington power transistor 4 in 1)
MP4503
High Power Switching Applications.
Hammer Drive, Pulse Motor Drive and Inductive Load
Switching.
Package with heat sink isolated to lead (SIP 12 pin)
High collector power dissipation (4 devices operation)
: P
T
= 5 W (Ta = 25°C)
High collector current: I
C (DC)
= ±4 A (max)
High DC current gain: h
FE
= 2000 (min) (V
CE
= ±2 V, I
C
= ±1 A)
Maximum Ratings
(Ta = 25°C)
Rating
Characteristics
Symbol
NPN
PNP
Unit
Collector-base voltage
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
100
100
V
Collector-emitter voltage
80
80
V
Emitter-base voltage
5
5
V
DC
4
4
Collector current
Pulse
6
6
A
Continuous base current
0.4
0.4
A
Collector power dissipation
(1 device operation)
P
C
3.0
W
Ta = 25°C
5.0
Collector power
dissipation
(4 devices operation)
Tc = 25°C
P
T
25
W
Isolation voltage
V
Isol
1000
V
Junction temperature
T
j
150
°C
Storage temperature range
T
stg
55 to 150
°C
Array Configuration
Industrial Applications
Unit: mm
JEDEC
JEITA
TOSHIBA
2-32B1C
Weight: 6.0 g (typ.)
2
1
R1 R2
6
11
4
5
R1
4.5 k
8
7
12
R1 R2
9
R2
300
相關(guān)PDF資料
PDF描述
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