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參數資料
| 型號： | MP4TD0900G |
| 廠商： | M-Pulse Microwave Inc. |
| 英文描述： | Silicon Bipolar MMIC Cascadable Amplifier |
| 中文描述： | 硅雙極單片級聯放大器 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 141K |
| 代理商： | MP4TD0900G |
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________ 1
PH (408) 432-1480 FX (408) 432-3440
M-Pulse Microwave
Silicon Bipolar MMIC
Cascadable Amplifier
MP4TD0900
Features
Cascadable 50
Gain Block
3dB Bandwidth: DC to 4.5 GHz
8.0 dB Typical Gain @ 1.0 GHz
Low SWR: <1.5 from 0.1 to 3.0 Ghz
Unconditionally Stable (k>1)
Description
M-Pulse's MP4TD0900 is a high performance silicon
bipolar MMIC chip. The MP4TD0900 is designed for
use where a general purpose 50
gain block is required.
Typical applications include narrow and wide band IF
and RF amplifiers in industrial and military applications.
The MP4TD0900 is fabricated using a 10 GHz fT silicon
bipolar technology that features gold metalization and IC
passivation for increased performance and reliability.
TYPICAL POWER GAIN vs FREQUENCY
12
0
2
4
6
8
10
0.1
1
10
FREQUENCY (GHz)
G
Id=35mA
Electrical Specifications @ T
A
= +25
°
C, Id = 35 mA; Z0 = 50
(Performance Requires 45 pF Feedback Capacitor
Symbol
Parameters
Gp
Power Gain (
S21
2)
Gp
Gain Flatness
f
3dB
3 dB Bandwidth
SWR
in
Input SWR
SWR
out
Output SWR
P
1dB
Output Power @ 1dB Gain Compression
NF
50
Noise Figure
IP
3
Third Order Intercept Point
t
D
Group Delay
V
d
Device Voltage
dV/dT
Device Voltage Temperature Coefficient
Chip Outline Drawing
1,2,3,4
Feedback Capacitor
RF Input
Ground
Optional RF Output & +7.8 Volts
375
(14.8 mil)
μ
375
(14.8 mil)
μ
Notes:
(unless otherwise specified)
1. Chip Thickness is 120
μ
m; 4.8 mils
2. Bond Pads are 40
μ
m; 1.6 mils typical in diameter
3. Output Contact & +DC Voltage Is Normally Made On
Backside Of Chip At Die Attach
4. Tolerance:
μ
m .xx =
±
.13; mil .x =
±
.5
Ordering Information
Model No.
MP4TD0900G
MP4TD0900W
Type of Carrier
GEL PACK
Waffle Pack
Test Conditions
f = 0.1 GHz
f = 0.1 to 3.0 GHz
Units
dB
dB
GHz
-
-
dBm
dB
dBm
ps
V
mV/
°
C
Min.
-
-
-
-
-
-
-
-
-
7.0
-
Typ.
8.0
+ 0.3
4.5
2.0
1.5
12.0
6.0
23.0
100
7.8
-16.0
Max.
-
-
-
-
-
-
-
-
-
8.6
-
-
f = 0.1 to 3.0 GHz
f = 0.1 to 3.0 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
-
-
相關PDF資料 |
PDF描述 |
|---|---|
| MP4TD0900W | Silicon Bipolar MMIC Cascadable Amplifier |
| MP4TD0910 | Silicon Bipolar MMIC Cascadable Amplifier |
| MP4TD0910T | Silicon Bipolar MMIC Cascadable Amplifier |
| MP4TD0920 | Silicon Bipolar MMIC Cascadable Amplifier |
| MP4TD0935 | Silicon Bipolar MMIC Cascadable Amplifier |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MP4TD0900W | 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier |
| MP4TD0910 | 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier |
| MP4TD0910T | 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier |
| MP4TD0920 | 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier |
| MP4TD0935 | 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier |
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