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參數資料
| 型號： | MP4TD0920 |
| 廠商： | M-Pulse Microwave Inc. |
| 英文描述： | Silicon Bipolar MMIC Cascadable Amplifier |
| 中文描述： | 硅雙極單片級聯放大器 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 55K |
| 代理商： | MP4TD0920 |
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________ 1
PH (408) 432-1480 FX (408) 432-3440
M-Pulse Microwave
Silicon Bipolar MMIC
Cascadable Amplifier
MP4TD0920
Features
Cascadable 50
Ω
Gain Block
3dB Bandwidth: DC to 4.0 GHz
7.5 dB Typical Gain @ 1.0 GHz
Low SWR: <1.6:1 from 0.1 to 3.0 GHz
Hermetic Gold-BeO Microstrip Package
The 20 package allows higher power operation
Description
M-Pulse's MP4TD0920 is a high performance silicon bipolar
MMIC housed in a hermetic high reliability package. The
MP4TD0920 is designed for use where a general purpose 50
Ω
gain block is required. Typical applications include narrow and
wide band IF and RF amplifiers in industrial and military
applications. The 20 style package is a superior thermal
dissipation package. This allows larger DC Current and the
resultant improvement in ouput power and P1dB performance
than that available from the packages for this chip.
The MP4TD0920 is fabricated using a 10 GHz fT silicon bipolar
technology that features gold metalization and IC passivation
for increased performance and reliability.
TYPICAL POWER GAIN vs FREQUENCY
12
0
2
4
6
8
10
0.1
1
10
FREQUENCY (GHz)
G
Id=35mA
Gold-BeO Microstrip Package Outline
1,2
0.060
1.525
0.030
0.762
0.30
7.62
TYP.
0.132
5.42
DIA
0.205
5.21
DIA
0.020
0.51
0.053
1.35
0.003
0.076
1
2
4
3
Notes:
(unless otherwise specified)
1.
Dimensions are in / mm
2.
Tolerance: in .xxx =
±
.005; mm .xx =
±
.13
Pin Configuration
Pin Number
1
2 & 4
3
Pin Description
RF Input
AC/DC Ground
RF Output and DC Bias
Ordering Information
Model No.
MP4TD0920
Package
BeO Ceramic
Electrical Specifications @ T
A
= +25
°
C, Id = 35 mA, Z0 = 50
Ω
Symbol
Parameters
Gp
Power Gain (
S
21
2
)
Δ
Gp
Gain Flatness
f
3 dB
3 dB Bandwidth
SWR
in
Input SWR
SWR
out
Output SWR
P
1 dB
Output Power @ 1 dB Gain Compression
NF
50
Ω
Noise Figure
IP
3
Third Order Intercept Point
t
D
Group Delay
V
d
Device Voltage
dV/dT
Device Voltage Temperature Coefficient
Test Conditions
f = 0.1 GHz
f = 0.1 to 2.0 GHz
Units
dB
dB
GHz
-
-
dBm
dB
dBm
ps
V
mV/
°
C
Min.
6.5
-
-
-
-
-
-
-
-
7.0
-
Typ.
7.5
±
0.5
4.0
1.4
1.6
11.5
6.0
23.0
100
7.8
-16.0
Max.
8.5
±
0.7
-
-
-
-
-
-
-
8.6
-
-
f = 0.1 to 3.0 GHz
f = 0.1 to 3.0 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
-
-
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PDF描述 |
|---|---|
| MP4TD0935 | Silicon Bipolar MMIC Cascadable Amplifier |
| MP4TD0935T | Silicon Bipolar MMIC Cascadable Amplifier |
| MP4TD0936 | Silicon Bipolar MMIC Cascadable Amplifier |
| MP4TD0936T | Silicon Bipolar MMIC Cascadable Amplifier |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MP4TD0935 | 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier |
| MP4TD0935T | 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier |
| MP4TD0936 | 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier |
| MP4TD0936T | 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier |
| MP4TD0970 | 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier |
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