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參數資料
| 型號： | MP4TD0936T |
| 廠商： | M-Pulse Microwave Inc. |
| 英文描述： | Silicon Bipolar MMIC Cascadable Amplifier |
| 中文描述： | 硅雙極單片級聯放大器 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 55K |
| 代理商： | MP4TD0936T |
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________ 1
PH (408) 432-1480 FX (408) 432-3440
M-Pulse Microwave
Silicon Bipolar MMIC
Cascadable Amplifier
MP4TD0935, MP4TD0936
Features
Cascadable 50
Ω
Gain Block
3dB Bandwidth: DC to 4.5 GHz
8.0 dB Typical Gain @ 1.0 GHz
Low SWR: <1.9 from 0.1 to 3.0 GHz
Cost Effective Ceramic Microstrip Package
Tape and Reel Packaging Available
Description
M-Pulse's
MP4TD0935
performance silicon bipolar MMICs housed in a cost
effective ceramic microstrip packages. The MP4TD0935
and MP4TD0936 are designed for use where a general
purpose 50
Ω
gain block is required. Typical applications
include narrow and wide band IF and RF amplifiers in
industrial and military applications.
The MP4TD0935 and MP4TD0936 are fabricated using a
10 GHz fT silicon bipolar technology that features gold
metalization and IC passivation for increased performance
and reliability.
TYPICAL POWER GAIN vs FREQUENCY
12
and
MP4TD0936
are
high
0
2
4
6
8
10
0.1
1
10
FREQUENCY (GHz)
G
Id=35mA
Ceramic Microstrip Case Style Outlines
1,2,3
Available in short lead version as MP4TD0936.
RF OUT
AND BIAS
RF INPUT
GND
GND
2
3
1
4
.057
.083
2,11
.100
2,54
.085
2,15
.455 ±.030
11,54±0,76
.006 ±.002
.022
0,56
.020
0,508
±0.010
0.180
4.57 ±0,25
MA4TD0936
MA4TD0935
Notes:
(unless otherwise specified)
1. Dimensions are in / mm
2. Tolerance:
in .xxx =
±
.005; mm .xx =
±
.13
3. See last page of data sheet for short lead Micro-X
Pin Configuration
Pin Number
1
2 & 4
3
Pin Description
RF Input
AC/DC Ground
RF Output and DC Bias
Electrical Specifications @ T
A
= +25
°
C, Id = 35 mA, Z0 = 50
Ω
Symbol
Parameters
Gp
Power Gain (
S21
2)
Δ
Gp
Gain Flatness
f
3dB
3 dB Bandwidth
SWR
in
Input SWR
SWR
out
Output SWR
P
1dB
Output Power @ 1dB Gain Compression
NF
50
Ω
Noise Figure
IP
3
Third Order Intercept Point
t
D
Group Delay
V
d
Device Voltage
dV/dT
Device Voltage Temperature Coefficient
Test Conditions
f = 0.1 GHz
f = 0.1 to 3.0 GHz
Units
dB
dB
GHz
-
-
dBm
dB
dBm
ps
V
mV/
°
C
Min.
7.0
-
-
-
-
-
-
-
-
7.0
-
Typ.
8.0
+ 0.4
4.5
1.9
1.4
11.5
6.0
23.0
100
7.8
-16.0
Max.
9.0
+ 0.6
-
-
-
-
-
-
-
8.6
-
-
f = 0.1 to 3.0 GHz
f = 0.1 to 3.0 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
-
-
相關PDF資料 |
PDF描述 |
|---|---|
| MP4TD0970 | Silicon Bipolar MMIC Cascadable Amplifier |
| MP4TD0970T | Silicon Bipolar MMIC Cascadable Amplifier |
| MP4TD1100 | Silicon Bipolar MMIC Cascadable Amplifier |
| MP4TD1100G | Silicon Bipolar MMIC Cascadable Amplifier |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MP4TD0970 | 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier |
| MP4TD0970T | 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier |
| MP4TD1100 | 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier |
| MP4TD1100G | 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier |
| MP4TD1100W | 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier |
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