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參數資料
| 型號： | MP4TD1136T |
| 廠商： | M-Pulse Microwave Inc. |
| 英文描述： | Silicon Bipolar MMIC Cascadable Amplifier |
| 中文描述： | 硅雙極單片級聯放大器 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 55K |
| 代理商： | MP4TD1136T |
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________ 1
PH (408) 432-1480 FX (408) 432-3440
M-Pulse Microwave
Silicon Bipolar MMIC
Cascadable Amplifier
MP4TD1135, MP4TD1136
Features
High Dynamic Range Cascadable
50
Ω
/75
Ω
Gain Block
3dB Bandwidth: 50 MHz to 1.0 GHz
17 dBm Typical P
1dB
@ 0.7 GHz
11 dB Typical Gain @ 0.5 GHz
4.0 dB Typical Noise Figre @ 0.7 GHz
Cost Effective Ceramic Microstrip Package
Tape and Reel Packaging Available
Description
M-Pulse's
MP4TD1135
performance silicon bipolar MMICs housed in cost effective
ceramic microstrip packages. The MP4TD1135 and
MP4TD1136 are designed for use in 50
Ω
or 75
Ω
systems
where a high dynamic range gain block is required. Typical
applications include narrow and wide band IF and RF
amplifiers in industrial and military applications.
The MP4TD1135 and MP4TD1136 are fabricated using a
10 GHz fT silicon bipolar technology that features gold
metalization and IC passivation for increased performance
and reliability.
TYPICAL POWER GAIN vs FREQUENCY
14
and
MP4TD1136
are
high
0
2
4
6
8
10
12
0.1
1
10
FREQUENCY (GHz)
G
Id=60mA
Ceramic Microstrip Case Style Outlines
1,2,3
Available in short lead version as MP4TD1136.
RF OUT
AND BIAS
RF INPUT
GND
GND
2
3
1
4
.057
.083
2,11
.100
2,54
.085
2,15
.455 ±.030
11,54±0,76
.006 ±.002
.022
0,56
.020
0,508
±0.010
0.180
4.57 ±0,25
MA4TD1136
MA4TD1135
Notes:
(unless otherwise specified)
1. Dimensions are in / mm
2. Tolerance:
in .xxx =
±
.005; mm .xx =
±
.13
3. See last page of data sheet for short lead Micro-X
Pin Configuration
Pin Number
1
2 & 4
3
Pin Description
RF Input
AC/DC Ground
RF Output and DC Bias
Electrical Specifications @ T
A
= +25
°
C, Id = 60 mA, Z0 = 50
Ω
Symbol
Parameters
Gp
Power Gain (
S21
2)
Δ
Gp
Gain Flatness
f
3dB
3 dB Bandwidth
SWR
in
Input SWR
SWR
out
Output SWR
P
1dB
Output Power @ 1dB Gain Compression
NF
50
Ω
Noise Figure
IP
3
Third Order Intercept Point
t
D
Group Delay
V
d
Device Voltage
dV/dT
Device Voltage Temperature Coefficient
Test Conditions
f = 0.1 GHz
f = 0.1 to 0.7 GHz
ref 50 MHz Gain
f = 0.1 to 2.0 GHz
f = 0.1 to 2.0 GHz
f = 0.7 GHz
f = 0.7 GHz
f = 1.0 GHz
f = 1.0 GHz
Units
dB
dB
GHz
-
-
dBm
dB
dBm
ps
V
mV/
°
C
Min.
11.5
-
-
-
-
16.0
-
-
-
4.5
-
Typ.
12.5
+ 0.9
1.0
2.0
1.9
17.0
4.0
30.0
160
5.5
-8.0
Max.
13.5
+ 1.1
-
-
-
-
4.5
-
-
6.5
-
-
-
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| MP4TD1170 | Silicon Bipolar MMIC Cascadable Amplifier |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MP4TD1170 | 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier |
| MP4TD1170T | 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier |
| MP4TD4135 | 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier |
| MP4TD4135T | 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier |
| MP4TD4136 | 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier |
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