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參數資料
| 型號： | MPS2907 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | General Purpose Transistors(PNP Silicon) |
| 中文描述： | 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | PLASTIC, TO-226AA, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大?。?/td> | 245K |
| 代理商： | MPS2907 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1996
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
MPS2907
MPS2907A
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
PD
–40
–60
Vdc
Collector–Base Voltage
–60
Vdc
Emitter–Base Voltage
–5.0
Vdc
Collector Current — Continuous
–600
mAdc
Total Device Dissipation
@ TA = 25
°
C
Derate above 25
°
C
625
5.0
mW
mW/
°
C
Total Device Dissipation
@ TC = 25
°
C
Derate above 25
°
C
PD
1.5
12
Watts
mW/
°
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–500 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RJA
RJC
200
°
C/W
Thermal Resistance, Junction to Case
83.3
°
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(1)
(IC = –10 mAdc, IB = 0)
MPS2907
MPS2907A
V(BR)CEO
–40
–60
—
—
Vdc
Collector–Base Breakdown Voltage
(IC = –10 Adc, IE = 0)
V(BR)CBO
–60
—
Vdc
Emitter–Base Breakdown Voltage
(IE = –10 Adc, IC = 0)
V(BR)EBO
–5.0
—
Vdc
Collector Cutoff Current
(VCE = –30 Vdc, VEB(off) = –0.5 Vdc)
ICEX
—
–50
nAdc
Collector Cutoff Current
(VCB = –50 Vdc, IE = 0)
MPS2907
MPS2907A
MPS2907
MPS2907A
(VCB = –50 Vdc, IE = 0, TA = 150
°
C)
ICBO
—
—
—
—
–0.02
–0.01
–20
–10
μ
Adc
Base Current
(VCE = –30 Vdc, VEB(off) = –0.5 Vdc)
IB
—
–50
nAdc
1. Pulse Test: Pulse Width
300 s, Duty Cycle
2.0%.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MPS2907/D
SEMICONDUCTOR TECHNICAL DATA
*Motorola Preferred Device
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
1
23
COLLECTOR
3
2
BASE
1
EMITTER
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相關代理商/技術參數 |
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| MPS2907A | 功能描述:兩極晶體管 - BJT 600mA 60V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS2907A\E6 | 功能描述:兩極晶體管 - BJT REORD 511-PN2907A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS2907A_10 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:General Purpose Transistors |
| MPS2907AG | 功能描述:兩極晶體管 - BJT 600mA 60V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS2907AG | 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR |
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