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參數(shù)資料
| 型號： | MPS6521 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Amplifier Transistors |
| 中文描述： | 100 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | CASE 29-11, TO-226, 3 PIN |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 551K |
| 代理商： | MPS6521 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MAXIMUM RATINGS
Rating
Symbol
NPN
PNP
Unit
Collector–Emitter Voltage
MPS6521
MPS6523
VCEO
25
—
—
25
Vdc
Collector–Base Voltage
MPS6521
MPS6523
VCBO
40
—
—
25
Vdc
Emitter–Base Voltage
VEBO
IC
PD
4.0
Vdc
Collector Current — Continuous
100
mAdc
Total Device Dissipation @ TA = 25
°
C
Derate above 25
°
C
625
5.0
mW
mW/
°
C
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
PD
1.5
12
Watts
mW/
°
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
(Printed Circuit Board Mounting)
RJA
200
°
C/W
Thermal Resistance, Junction to Case
RJC
83.3
°
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 0.5 mAdc, IB = 0)
V(BR)CEO
25
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 10 Adc, IC = 0)
V(BR)EBO
4.0
—
Vdc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
(VCB = 20 Vdc, IE = 0)
MPS6521
MPS6523
ICBO
—
—
0.05
0.05
Adc
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MPS6521/D
SEMICONDUCTOR TECHNICAL DATA
*Motorola Preferred Device
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
1
23
Voltage and current are negative
for PNP transistors
COLLECTOR 3
2
BASE
1 EMITTER
COLLECTOR 3
2
BASE
1 EMITTER
(Replaces MPS6520/D)
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| MPS6523 | Amplifier Transistors |
| MPS6520 | NPN (AMPLIFIER TRANSISTOR) |
| MPS6523 | PNP (AMPLIFIER TRANSISTOR) |
| MPS6523 | Amplifier Transistors |
| MPS6520 | Amplifier Transistors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MPS6521 LEDFREE | 功能描述:兩極晶體管 - BJT NPN Gen Pur SS sistors RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS6521 | 制造商:Fairchild Semiconductor Corporation 功能描述:Amplifiers - Operational Amplifier (Op-A |
| MPS6521_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Amplifier Transistors |
| MPS6521_D26Z | 功能描述:兩極晶體管 - BJT Low Level Transistor NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS6521_Q | 功能描述:兩極晶體管 - BJT Low Level Transistor NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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