欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: MPS6521RLRM
廠商: ON SEMICONDUCTOR
元件分類: 小信號晶體管
英文描述: 100 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: TO-226AA, 3 PIN
文件頁數: 1/11頁
文件大小: 480K
代理商: MPS6521RLRM
Amplifier Transistors
MAXIMUM RATINGS
Rating
Symbol
NPN
PNP
Unit
Collector–Emitter Voltage
MPS6521
MPS6523
VCEO
25
25
Vdc
Collector–Base Voltage
MPS6521
MPS6523
VCBO
40
25
Vdc
Emitter–Base Voltage
VEBO
4.0
Vdc
Collector Current — Continuous
IC
100
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25
°C
PD
625
5.0
mW
mW/
°C
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
1.5
12
Watts
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
(Printed Circuit Board Mounting)
RqJA
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 0.5 mAdc, IB = 0)
V(BR)CEO
25
Vdc
Emitter–Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
4.0
Vdc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
MPS6521
(VCB = 20 Vdc, IE = 0)
MPS6523
ICBO
0.05
mAdc
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 1
826
Publication Order Number:
MPS6521/D
NPN
MPS6521
PNP
MPS6523
*ON Semiconductor Preferred Device
CASE 29–11, STYLE 1
TO–92 (TO–226AA)
1
2
3
*
Voltage and current are negative
for PNP transistors
COLLECTOR 3
2
BASE
1 EMITTER
COLLECTOR 3
2
BASE
1 EMITTER
相關PDF資料
PDF描述
MPS6523RLRM 100 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPS6523RLRA 100 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPS6521RL1 100 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPS6523RL 100 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPS6523RLRE 100 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
相關代理商/技術參數
參數描述
MPS6522 功能描述:兩極晶體管 - BJT PNP Gen Pur SS RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MPS6523 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MPS6523_01 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:PNP General Purpose Amplifier
MPS6523_D26Z 功能描述:兩極晶體管 - BJT PNP Gen Purp Amp RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MPS6523_Q 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
主站蜘蛛池模板: 沅江市| 江安县| 英德市| 凤城市| 兴安盟| 顺平县| 贵南县| 沿河| 蓬安县| 都匀市| 定安县| 济阳县| 务川| 马鞍山市| 天水市| 旬阳县| 本溪市| 双牌县| 怀仁县| 濮阳县| 阿坝县| 卫辉市| 普格县| 建水县| 奎屯市| 涡阳县| 湖口县| 惠州市| 湘潭县| 彭山县| 浦北县| 乐安县| 明光市| 托克托县| 长武县| 中江县| 东乡县| 治多县| 夏津县| 昌平区| 弋阳县|