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參數資料
| 型號： | MPS6560 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Audio Transistor |
| 中文描述： | 500 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-226AA |
| 文件頁數： | 1/4頁 |
| 文件大小： | 69K |
| 代理商： | MPS6560 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
PD
25
Vdc
Collector–Base Voltage
25
Vdc
Emitter–Base Voltage
5.0
Vdc
Collector Current — Continuous
500
mAdc
Total Device Dissipation @ TA = 25
°
C
Derate above 25
°
C
625
5.0
mW
mW/
°
C
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
PD
1.5
12
Watts
mW/
°
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
RJA(1)
RJC
Max
Unit
Thermal Resistance, Junction to Ambient
200
°
C/mW
Thermal Resistance, Junction to Case
83.3
°
C/mW
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(2)
(IC = 10 mAdc, IB = 0)
V(BR)CEO
25
—
Vdc
Collector–Base Breakdown Voltage
(IC = 100 Adc, IE = 0)
V(BR)CBO
25
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 100 Adc, IC = 0)
V(BR)EBO
5.0
—
Vdc
Collector Cutoff Current
(VCE = 25 Vdc, IB = 0)
ICES
—
100
nAdc
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
ICBO
—
100
nAdc
Emitter Cutoff Current
(VEB(off) = 4.0 Vdc, IC = 0)
IEBO
—
100
nAdc
1. RJA is measured with the device soldered into a typical printed circuit board.
2. Pulse Test: Pulse Width
300 s; Duty Cycle
2.0%.
Order this document
by MPS6560/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
1
23
COLLECTOR
3
2
BASE
1
EMITTER
REV 1
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MPS6560G | 功能描述:兩極晶體管 - BJT 500mA 25V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS6561 | 功能描述:兩極晶體管 - BJT NPN Med Pwr RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS6562 | 功能描述:兩極晶體管 - BJT PNP Med Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS6562 D75Z | 制造商:Fairchild Semiconductor Corporation 功能描述:Trans GP BJT PNP 25V 1A 3-Pin TO-92 Ammo |
| MPS6562_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:PNP General Purpose Amplifier |
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