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參數資料
| 型號： | MPS6729 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | One Watt Amplifier Transistor (PNP Silicon) |
| 中文描述： | 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | CASE 29-10, TO-226, 3 PIN |
| 文件頁數： | 2/8頁 |
| 文件大小： | 85K |
| 代理商： | MPS6729 |
MPS6729
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (Note 1.)
(IC = –1.0 mAdc, IB = 0)
V(BR)CEO
–80
–
Vdc
Collector–Base Breakdown Voltage
(IC = 0.1 mA, IE = 0)
V(BR)CBO
–80
–
Vdc
Emitter–Base Breakdown Voltage
(IE = –10 Adc, IC = 0)
V(BR)EBO
–5.0
–
Vdc
Collector Cutoff Current
(VCB = –60 Vdc, IE = 0)
ICBO
–
–0.1
μ
Adc
Emitter Cutoff Current
(VEB = –5.0 Vdc, IC = 0)
ON CHARACTERISTICS
(Note 1.)
IEBO
–
–10
μ
Adc
DC Current Gain
(IC = –50 mAdc, VCE = –1.0 Vdc)
(IC = –250 mAdc, VCE = –1.0 Vdc)
hFE
80
50
–
250
–
Collector–Emitter Saturation Voltage
(IC = –250 mAdc, IB = –10 mAdc)
VCE(sat)
–
–0.5
Vdc
Base–Emitter On Voltage
(IC = –250 mAdc, VCE = –1.0 Vdc)
SMALL–SIGNAL CHARACTERISTICS
VBE(on)
–
–1.2
Vdc
Collector–Base Capacitance
(VCB = –10 Vdc, f = 1.0 MHz)
Ccb
–
30
pF
Small–Signal Current Gain
(IC = 200 mA, VCE = 5.0 V, f = 20 MHz)
hfe
2.5
25
1. Pulse Test: Pulse Width
300 s, Duty Cycle
2.0%.
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| MPS6729G | 功能描述:兩極晶體管 - BJT 500mA 80V 1W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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