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參數資料
型號: MPSA29G
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: Darlington Transistors NPN Silicon
中文描述: 500 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: LEAD FREE, CASE 29-11, TO-226, 3 PIN
文件頁數: 1/4頁
文件大小: 64K
代理商: MPSA29G
Semiconductor Components Industries, LLC, 2006
January, 2006 Rev. 2
1
Publication Order Number:
MPSA28/D
MPSA28, MPSA29
MPSA29 is a Preferred Device
Darlington Transistors
NPN Silicon
Features
PbFree Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
MPSA28
MPSA29
V
CES
80
100
Vdc
CollectorBase Voltage
MPSA28
MPSA29
V
CBO
80
100
Vdc
EmitterBase Voltage
V
EBO
12
Vdc
Collector Current Continuous
I
C
500
mAdc
Total Device Dissipation @ T
A
= 25
°
C
Derate above 25
°
C
P
D
625
5.0
mW
mW/
°
C
Total Device Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
1.5
12
W
mW/
°
C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
55 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, JunctiontoAmbient
R
JA
200
°
C/W
Thermal Resistance, JunctiontoCase
R
JC
83.3
°
C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
MPSA29
TO92
5,000 Units/Box
MPSA29G
TO92
(PbFree)
5,000 Units/Box
MPSA28RLRP
TO92
2,000/Ammo Pack
MPSA28RLRPG
TO92
(PbFree)
2,000/Ammo Pack
Device
Package
Shipping
MPSA28
TO92
5,000 Units/Box
MPSA28G
TO92
(PbFree)
5,000 Units/Box
Preferred
devices are recommended choices for future use
and best overall value.
MPSA29RLRP
TO92
2,000/Ammo Pack
MPSA29RLRPG
TO92
(PbFree)
2,000/Ammo Pack
ORDERING INFORMATION
COLLECTOR 3
BASE
2
EMITTER 1
MPSA2x = Device Code
x = 8 or 9
A
= Assembly Location
Y
= Year
WW
= Work Week
= PbFree Package
(Note: Microdot may be in either location)
TO92
CASE 2911
STYLE 1
1
23
MARKING
DIAGRAM
MPS
A2x
AYWW
相關PDF資料
PDF描述
MPSA29RLRP Darlington Transistors NPN Silicon
MPSA29RLRPG Darlington Transistors NPN Silicon
MPV3J80U8PJ-R 9x14 mm, 3.3 Volt, PECL/LVDS, VCXO
MPV3J80B1QJ-R 9x14 mm, 3.3 Volt, PECL/LVDS, VCXO
MPV3J80B8PJ 9x14 mm, 3.3 Volt, PECL/LVDS, VCXO
相關代理商/技術參數
參數描述
MPSA29RLRP 功能描述:達林頓晶體管 500mA 100V NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
MPSA29RLRPG 功能描述:達林頓晶體管 500mA 100V NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
MPSA30 制造商:Motorola Inc 功能描述:
MPSA42 功能描述:兩極晶體管 - BJT NPN Gen Pur SS RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MPS-A42 制造商:MICRO-ELECTRONICS 制造商全稱:Micro Electronics 功能描述:NPN SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS
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