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參數(shù)資料
| 型號： | MPSW45RLREG |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | One Watt Darlington Transistors NPN Silicon |
| 中文描述： | 1000 mA, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | LEAD FREE, CASE 29-10, TO-226, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 81K |
| 代理商： | MPSW45RLREG |
Semiconductor Components Industries, LLC, 2006
February, 2006 Rev. 3
1
Publication Order Number:
MPSW45/D
MPSW45, MPSW45A
MPSW45A is a Preferred Device
One Watt Darlington
Transistors
NPN Silicon
Features
PbFree Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
MPSW45A
MPSW45
V
CES
40
50
Vdc
CollectorBase Voltage
MPSW45A
MPSW45
V
CBO
50
60
Vdc
EmitterBase Voltage
V
EBO
12
Vdc
Collector Current Continuous
I
C
1.0
Adc
Total Device Dissipation @ T
A
= 25
°
C
Derate above 25
°
C
P
D
1.0
8.0
W
mW/
°
C
Total Device Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
2.5
20
W
mW/
°
C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
55 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, JunctiontoAmbient
R
JA
125
°
C/W
Thermal Resistance, JunctiontoCase
R
JC
50
°
C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
Preferred
devices are recommended choices for future use
and best overall value.
COLLECTOR 3
BASE
2
EMITTER 1
TO92 (TO226)
CASE 2910
STYLE 1
MARKING DIAGRAM
3
12
MPS
W45x
AYWW
MPSW45x = Device Code
x = 45A Devices
A
= Assembly Location
Y
= Year
WW
= Work Week
= PbFree Package
(Note: Microdot may be in either location)
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MPSW51 | 功能描述:兩極晶體管 - BJT 1A 40V 1W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSW51_10 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:One Watt High Current Transistors |
| MPSW51A | 功能描述:兩極晶體管 - BJT 1A 50V 1W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSW51AG | 功能描述:兩極晶體管 - BJT 1A 50V 1W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSW51ARLRA | 功能描述:兩極晶體管 - BJT 1A 50V 1W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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