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參數資料
| 型號： | MRF1508T1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | POWER, PLASTIC, CASE 466-02, 4 PIN |
| 文件頁數： | 6/16頁 |
| 文件大小： | 202K |
| 代理商： | MRF1508T1 |
LIFETIME
BUY
LAST
ORDER
30JUN02
LAST
SHIP
30DEC0
2
MRF1508
14
MOTOROLA RF DEVICE DATA
MOUNTING
The specified maximum thermal resistance of 2
°C/W
assumes a majority of the 0.065
″ x 0.180″ source contact on
the back side of the package is in good contact with an
appropriate heat sink. As with all RF power devices, the goal
of the thermal design should be to minimize the temperature
at the back side of the package. Refer to Motorola
Application Note AN4005/D, “Thermal Management and
Mounting Method for the PLD–1.5 RF Power Surface Mount
Package,” and Engineering Bulletin EB209/D, “Mounting
Method for RF Power Leadless Surface Mount Transistor” for
additional information.
AMPLIFIER DESIGN
Impedance matching networks similar to those used with
bipolar transistors are suitable for the MRF1508. For
examples see Motorola Application Note AN721, “Impedance
Matching Networks Applied to RF Power Transistors.”
Large–signal impedances are provided, and will yield a good
first pass approximation.
Since RF power MOSFETs are triode devices, they are not
unilateral. This coupled with the very high gain of the
MRF1508 yields a device capable of self oscillation. Stability
may be achieved by techniques such as drain loading, input
shunt resistive loading, or output to input feedback. The RF
test fixture implements a parallel resistor and capacitor in
series with the gate, and has a load line selected for a higher
efficiency, lower gain, and more stable operating region.
Tw o–port stability analy s i s with the MRF1508
S–parameters provides a useful tool for selection of loading or
feedback circuitry to assure stable operation. See Motorola
Application Note AN215A, “RF Small–Signal Design Using
Two–Port Parameters” for a discussion of two port network
theory and stability.
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