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參數(shù)資料
| 型號： | MRF1513T1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | PLASTIC, PLD-1.5, CASE 466-03, 4 PIN |
| 文件頁數(shù)： | 1/16頁 |
| 文件大小： | 523K |
| 代理商： | MRF1513T1 |
AR
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INF
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RMA
TI
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ARCHIVE
INFORMA
TION
Replaced by MRF1513NT1. There are no form, fit or function changes with this part
replacement. N suffix added to part number to indicate transition to lead-free
terminations.
MRF1513T1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequen-
cies to 520 MHz. The high gain and broadband performance of this device
make it ideal for large-signal, common source amplifier applications in 7.5 volt
portable and 12.5 volt mobile FM equipment.
Specified Performance @ 520 MHz, 12.5 Volts
Output Power — 3 Watts
Power Gain — 11 dB
Efficiency — 55%
Capable of Handling 20:1 VSWR, @ 15.5 Vdc,
520 MHz, 2 dB Overdrive
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal
Impedance Parameters
Broadband UHF/VHF Demonstration Amplifier Information
Available Upon Request
In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm,
7 Inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +40
Vdc
Gate-Source Voltage
VGS
±20
Vdc
Drain Current — Continuous
ID
2
Adc
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°C
PD
31.25
0.25
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
150
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
RθJC
4
°C/W
Table 3. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
1
260
°C
1. Calculated based on the formula PD =
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Document Number: MRF1513
Rev. 7, 5/2006
Freescale Semiconductor
Technical Data
MRF1513T1
520 MHz, 3 W, 12.5 V
LATERAL N-CHANNEL
BROADBAND
RF POWER MOSFET
CASE 466-03, STYLE 1
PLD-1.5
PLASTIC
G
D
S
TJ– TC
RθJC
Freescale Semiconductor, Inc., 2006. All rights reserved.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| MRF1517N | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF1517NT1 | 功能描述:射頻MOSFET電源晶體管 RF LDMOS FET PLD1.5N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF1517NT1 | 制造商:Freescale Semiconductor 功能描述:Transistor |
| MRF1517NT1_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF1517NT1-CUT TAPE | 制造商:Freescale 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
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