欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數(shù)資料
型號: MRF1513T1
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: PLASTIC, PLD-1.5, CASE 466-03, 4 PIN
文件頁數(shù): 3/16頁
文件大小: 523K
代理商: MRF1513T1
AR
C
HIVE
INF
O
RMA
TI
O
N
ARCHIVE
INFORMA
TION
MRF1513T1
11
RF Device Data
Freescale Semiconductor
APPLICATIONS INFORMATION
DESIGN CONSIDERATIONS
This device is a common-source, RF power, N-Channel
enhancement mode, Lateral Metal -Oxide Semiconductor
Field -Effect Transistor (MOSFET). Freescale Application
Note AN211A, “FETs in Theory and Practice”, is suggested
reading for those not familiar with the construction and char-
acteristics of FETs.
This surface mount packaged device was designed pri-
marily for VHF and UHF portable power amplifier applica-
tions. Manufacturability is improved by utilizing the tape and
reel capability for fully automated pick and placement of
parts. However, care should be taken in the design process
to insure proper heat sinking of the device.
The major advantages of Lateral RF power MOSFETs in-
clude high gain, simple bias systems, relative immunity from
thermal runaway, and the ability to withstand severely mis-
matched loads without suffering damage.
MOSFET CAPACITANCES
The physical structure of a MOSFET results in capacitors
between all three terminals. The metal oxide gate structure
determines the capacitors from gate -to -drain (Cgd), and
gate-to-source (Cgs). The PN junction formed during fab-
rication of the RF MOSFET results in a junction capacitance
from drain-to-source (Cds). These capacitances are charac-
terized as input (Ciss), output (Coss) and reverse transfer
(Crss) capacitances on data sheets. The relationships be-
tween the inter-terminal capacitances and those given on
data sheets are shown below. The Ciss can be specified in
two ways:
1. Drain shorted to source and positive voltage at the gate.
2. Positive voltage of the drain in respect to source and zero
volts at the gate.
In the latter case, the numbers are lower. However, neither
method represents the actual operating conditions in RF ap-
plications.
Drain
Cds
Source
Gate
Cgd
Cgs
Ciss = Cgd + Cgs
Coss = Cgd + Cds
Crss = Cgd
DRAIN CHARACTERISTICS
One critical figure of merit for a FET is its static resistance
in the full-on condition. This on-resistance, RDS(on), occurs
in the linear region of the output characteristic and is speci-
fied at a specific gate-source voltage and drain current. The
drain - source voltage under these conditions is termed
VDS(on). For MOSFETs, VDS(on) has a positive temperature
coefficient at high temperatures because it contributes to the
power dissipation within the device.
BVDSS values for this device are higher than normally re-
quired for typical applications. Measurement of BVDSS is not
recommended and may result in possible damage to the de-
vice.
GATE CHARACTERISTICS
The gate of the RF MOSFET is a polysilicon material, and
is electrically isolated from the source by a layer of oxide.
The DC input resistance is very high - on the order of 109 Ω
— resulting in a leakage current of a few nanoamperes.
Gate control is achieved by applying a positive voltage to
the gate greater than the gate-to-source threshold voltage,
VGS(th).
Gate Voltage Rating — Never exceed the gate voltage
rating. Exceeding the rated VGS can result in permanent
damage to the oxide layer in the gate region.
Gate Termination — The gates of these devices are es-
sentially capacitors. Circuits that leave the gate open-cir-
cuited or floating should be avoided. These conditions can
result in turn-on of the devices due to voltage build-up on
the input capacitor due to leakage currents or pickup.
Gate Protection — These devices do not have an internal
monolithic zener diode from gate-to-source. If gate protec-
tion is required, an external zener diode is recommended.
Using a resistor to keep the gate-to-source impedance low
also helps dampen transients and serves another important
function. Voltage transients on the drain can be coupled to
the gate through the parasitic gate-drain capacitance. If the
gate-to-source impedance and the rate of voltage change
on the drain are both high, then the signal coupled to the gate
may be large enough to exceed the gate-threshold voltage
and turn the device on.
DC BIAS
Since this device is an enhancement mode FET, drain cur-
rent flows only when the gate is at a higher potential than the
source. RF power FETs operate optimally with a quiescent
drain current (IDQ), whose value is application dependent.
This device was characterized at IDQ = 150 mA, which is the
suggested value of bias current for typical applications. For
special applications such as linear amplification, IDQ may
have to be selected to optimize the critical parameters.
The gate is a dc open circuit and draws no current. There-
fore, the gate bias circuit may generally be just a simple re-
sistive divider network. Some special applications may
require a more elaborate bias system.
GAIN CONTROL
Power output of this device may be controlled to some de-
gree with a low power dc control signal applied to the gate,
thus facilitating applications such as manual gain control,
ALC/AGC and modulation systems. This characteristic is
very dependent on frequency and load line.
相關(guān)PDF資料
PDF描述
MRF1513T1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF1513T1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF1517NT1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF1518T1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF1535FNT1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272BA
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF1517N 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor
MRF1517NT1 功能描述:射頻MOSFET電源晶體管 RF LDMOS FET PLD1.5N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF1517NT1 制造商:Freescale Semiconductor 功能描述:Transistor
MRF1517NT1_08 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor
MRF1517NT1-CUT TAPE 制造商:Freescale 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
主站蜘蛛池模板: 小金县| 长顺县| 错那县| 阿瓦提县| 千阳县| 长子县| 乐至县| 石台县| 勃利县| 榆社县| 通海县| 遂昌县| 沙雅县| 罗江县| 延庆县| 白玉县| 类乌齐县| 胶南市| 旅游| 福清市| 威信县| 吴桥县| 平邑县| 泽库县| 汾阳市| 石台县| 岳西县| 唐河县| 通海县| 赤水市| 从江县| 沛县| 眉山市| 荔浦县| 兴安县| 德清县| 华坪县| 余干县| 安国市| 牟定县| 金门县|