- 您現在的位置：買賣IC網 > PDF目錄98035 > MRF1511NT1 (FREESCALE SEMICONDUCTOR INC) VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF資料下載
參數資料
| 型號： | MRF1511NT1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, PLASTIC, PLD-1.5, CASE 466-03, 4 PIN |
| 文件頁數： | 7/14頁 |
| 文件大小： | 466K |
| 代理商： | MRF1511NT1 |
2
RF Device Data
Freescale Semiconductor
MRF1511NT1
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Current
(VDS = 35 Vdc, VGS = 0)
IDSS
—
1
μAdc
Gate-Source Leakage Current
(VGS = 10 Vdc, VDS = 0)
IGSS
—
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS = 7.5 Vdc, ID = 170 μA)
VGS(th)
1
1.6
2.1
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 1 Adc)
VDS(on)
—
0.4
—
Vdc
Dynamic Characteristics
Input Capacitance
(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz)
Ciss
—
100
—
pF
Output Capacitance
(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz)
Coss
—
53
—
pF
Reverse Transfer Capacitance
(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz)
Crss
—
8
—
pF
Functional Tests (In Freescale Test Fixture)
Common-Source Amplifier Power Gain
(VDD = 7.5 Vdc, Pout = 8 Watts, IDQ = 150 mA, f = 175 MHz)
Gps
—
13
—
dB
Drain Efficiency
(VDD = 7.5 Vdc, Pout = 8 Watts, IDQ = 150 mA, f = 175 MHz)
η
—
70
—
%
相關PDF資料 |
PDF描述 |
|---|---|
| MRF1511T1 | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF1513NT1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF1513T1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF1513T1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF1513T1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MRF1511NT1_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF1511NT1_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF1511T1 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF1513N | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF1513NT1 | 功能描述:射頻MOSFET電源晶體管 RF LDMOS FET PLD1.5 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
發布緊急采購，3分鐘左右您將得到回復。