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參數資料
| 型號： | MRF1535FNT1 |
| 廠商： | Motorola, Inc. |
| 英文描述： | RF Power Field Effect Transistors |
| 中文描述： | 射頻功率場效應晶體管 |
| 文件頁數： | 1/16頁 |
| 文件大小： | 257K |
| 代理商： | MRF1535FNT1 |
MRF1535NT1 MRF1535FNT1 MRF1535T1 MRF1535FT1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N
Channel Enhancement
Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies to 520 MHz. The high gain and broadband performance of these devices
make them ideal for large
signal, common source amplifier applications in
12.5 volt mobile FM equipment.
Specified Performance @ 520 MHz, 12.5 Volts
Output Power — 35 Watts
Power Gain — 10.0 dB
Efficiency — 50%
Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 520 MHz, 2 dB Overdrive
Excellent Thermal Stability
Characterized with Series Equivalent Large
Signal Impedance Parameters
Broadband
Full Power Across the Band: 135
175 MHz
400
470 MHz
450
520 MHz
Broadband UHF/VHF Demonstration Amplifier Information Available
Upon Request
N Suffix Indicates Lead
Free Terminations
In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain
Source Voltage
V
DSS
0.5, +40
Vdc
Gate
Source Voltage
V
GS
±
20
Vdc
Drain Current — Continuous
I
D
6
Adc
Total Device Dissipation @ T
C
= 25
°
C
(1)
Derate above 25
°
C
P
D
135
0.50
W
W/
°
C
Storage Temperature Range
T
stg
65 to +150
°
C
Operating Junction Temperature
T
J
175
°
C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θ
JC
0.90
°
C/W
Table 3. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22
A113, IPC/JEDEC J
STD
020
1
260
°
C
1. Calculated based on the formula P
D
=
NOTE
CAUTION
MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
MRF1535T1
Rev. 6, 1/2005
Freescale Semiconductor
Technical Data
520 MHz, 35 W, 12.5 V
LATERAL N
CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 1264
09, STYLE 1
TO
272
PLASTIC
MRF1535T1(NT1)
MRF1535NT1
MRF1535FNT1
MRF1535T1
MRF1535FT1
CASE 1264A
02, STYLE 1
TO
272 STRAIGHT LEAD
PLASTIC
MRF1535FT1(FNT1)
TJ –TC
R
θ
JC
Freescale Semiconductor, Inc., 2005. All rights reserved.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MRF1535FT1 | 制造商:Freescale Semiconductor 功能描述: 制造商:Rochester Electronics LLC 功能描述: |
| MRF1535N | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF1535NT1 | 功能描述:射頻MOSFET電源晶體管 RF LDMOS FET TO-272N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF1535NT1_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF1535NT1_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
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