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參數資料
型號: MRF1535T1
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272AA
封裝: PLASTIC, CASE 1264-09, TO-272, 6 PIN
文件頁數: 9/16頁
文件大小: 537K
代理商: MRF1535T1
AR
C
HIVE
INF
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RMA
TI
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ARCHIVE
INFORMA
TION
2
RF Device Data
Freescale Semiconductor
MRF1535T1 MRF1535FT1
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
(VGS = 0 Vdc, ID = 100 μAdc)
V(BR)DSS
60
Vdc
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
IDSS
1
μAdc
Gate-Source Leakage Current
(VGS = 10 Vdc, VDS = 0 Vdc)
IGSS
0.3
μAdc
On Characteristics
Gate Threshold Voltage
(VDS = 12.5 Vdc, ID = 400 μA)
VGS(th)
1
2.6
Vdc
Drain-Source On-Voltage
(VGS = 5 Vdc, ID = 0.6 A)
RDS(on)
0.7
Ω
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 2.0 Adc)
VDS(on)
1
Vdc
Dynamic Characteristics
Input Capacitance (Includes Input Matching Capacitance)
(VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz)
Ciss
250
pF
Output Capacitance
(VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz)
Coss
150
pF
Reverse Transfer Capacitance
(VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz)
Crss
20
pF
RF Characteristics (In Freescale Test Fixture)
Common-Source Amplifier Power Gain
(VDD = 12.5 Vdc, Pout = 35 Watts, IDQ = 500 mA)
f = 520 MHz
Gps
10
dB
Drain Efficiency
(VDD = 12.5 Vdc, Pout = 35 Watts, IDQ = 500 mA)
f = 520 MHz
η
50
%
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