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參數資料
| 型號： | MRF18060BLSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN |
| 文件頁數： | 9/12頁 |
| 文件大小： | 337K |
| 代理商： | MRF18060BLSR3 |
6
RF Device Data
Freescale Semiconductor
MRF18060BLR3 MRF18060BLSR3
TYPICAL CHARACTERISTICS (DATA TAKEN USING WIDEBAND DEMONSTRATION BOARD)
IRL
Pin = 6 W
Figure 5. Power Gain versus
Output Power
Pout, OUTPUT POWER (WATTS)
8
10
Figure 6. Output Power versus Supply Voltage
0
VDD, SUPPLY VOLTAGE (VOLTS)
100
10
40
G
ps
,POWER
GAIN
(dB)
18
1
P
Figure 7. Output Power versus Frequency
90
f, FREQUENCY (MHz)
0
Figure 8. Output Power and Efficiency
versus Input Power
Pin, INPUT POWER (WATTS)
20
1800
10
0
15
1
90
20
30
20
1900
60
100
30
22
50
40
10
30
0
2
50
70
1820
Figure 9. Wideband Gain and IRL
(at Small Signal)
15.0
f, FREQUENCY (MHz)
10.0
1700
10.5
12.0
12.5
2100
14.5
14.0
1900
1800
2000
10
9
13
16
14
500 mA
300 mA
100 mA
IDQ = 750 mA
26
1840
3
4
5
6
60
50
40
20
15
h
VDD = 26 Vdc
f = 1880 MHz
11
12
28
20
24
80
90
,OUTPUT
POWER
(W
A
TTS)
out
2.5 W
Pin = 5 W
VDD = 26 Vdc
IDQ = 500 mA
1 W
P
,OUTPUT
POWER
(W
A
TTS)
out
1860
1880
60
80
70
VDD = 26 Vdc
IDQ = 500 mA
1 W
0.5 W
3 W
50
40
60
70
80
P
,OUTPUT
POWER
(W
A
TTS)
out
25
30
Pout
VDD = 26 Vdc
IDQ = 500 mA
f = 1880 MHz
13.5
13.0
G
ps
,POWER
GAIN
(dB)
0
10
12
18
20
16
14
2
4
6
8
VDD = 26 Vdc
IDQ = 500 mA
Gps
35
45
55
11.0
11.5
IRL,
INPUT
RETURN
LOSS
(dB)
,DRAIN
EFFICIENCY
(%)
η
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相關代理商/技術參數 |
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| MRF18060BST | 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-391BVAR |
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