- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄98036 > MRF18085BLR3 (FREESCALE SEMICONDUCTOR INC) L BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | MRF18085BLR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780, CASE 465-06, 2 PIN |
| 文件頁數(shù)： | 5/12頁 |
| 文件大小： | 450K |
| 代理商： | MRF18085BLR3 |
2
RF Device Data
Freescale Semiconductor
MRF18085BLR3 MRF18085BLSR3
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
(VGS = 0 Vdc, ID = 100 μAdc)
V(BR)DSS
65
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
—
10
μAdc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 μAdc)
VGS(th)
2
—
4
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 600 mAdc)
VGS(Q)
2.5
3.9
4.5
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 2 Adc)
VDS(on)
—
0.18
0.21
Vdc
Dynamic Characteristics
Reverse Transfer Capacitance (1)
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Crss
—
3.6
—
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system)
Common-Source Amplifier Power Gain @ 85 W
(VDD = 26 Vdc, IDQ = 800 mA, f = 1930 - 1990 MHz)
Gps
11.5
12.5
—
dB
Drain Efficiency @ 85 W
(VDD = 26 Vdc, IDQ = 800 mA, f = 1930 - 1990 MHz)
η
46
50
—
%
Input Return Loss @ 85 W
(VDD = 26 Vdc, IDQ = 800 mA, f = 1930 - 1990 MHz)
IRL
—
-12
-9
dB
P1 dB Output Power
(VDD = 26 Vdc, IDQ = 800 mA, f = 1930 - 1990 MHz)
P1dB
80
90
—
W
1. Part is internally matched both on input and output.
相關PDF資料 |
PDF描述 |
|---|---|
| MRF181SR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF183LSR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF183R1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF183R1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF183SR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MRF18085BLSR3 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| MRF18085BR3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
| MRF18090A | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:1.80 - 1.88 GHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETS |
| MRF18090AR3 | 功能描述:IC MOSFET RF N-CHAN NI-880 RoHS:是 類別:分離式半導體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF18090AS | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:1.80 - 1.88 GHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETS |
發(fā)布緊急采購，3分鐘左右您將得到回復。