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參數(shù)資料
型號: MRF18085BLSR3
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN
文件頁數(shù): 5/12頁
文件大小: 450K
代理商: MRF18085BLSR3
2
RF Device Data
Freescale Semiconductor
MRF18085BLR3 MRF18085BLSR3
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
(VGS = 0 Vdc, ID = 100 μAdc)
V(BR)DSS
65
Vdc
Zero Gate Voltage Drain Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
10
μAdc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 μAdc)
VGS(th)
2
4
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 600 mAdc)
VGS(Q)
2.5
3.9
4.5
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 2 Adc)
VDS(on)
0.18
0.21
Vdc
Dynamic Characteristics
Reverse Transfer Capacitance (1)
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Crss
3.6
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system)
Common-Source Amplifier Power Gain @ 85 W
(VDD = 26 Vdc, IDQ = 800 mA, f = 1930 - 1990 MHz)
Gps
11.5
12.5
dB
Drain Efficiency @ 85 W
(VDD = 26 Vdc, IDQ = 800 mA, f = 1930 - 1990 MHz)
η
46
50
%
Input Return Loss @ 85 W
(VDD = 26 Vdc, IDQ = 800 mA, f = 1930 - 1990 MHz)
IRL
-12
-9
dB
P1 dB Output Power
(VDD = 26 Vdc, IDQ = 800 mA, f = 1930 - 1990 MHz)
P1dB
80
90
W
1. Part is internally matched both on input and output.
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