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參數(shù)資料
| 型號(hào)： | MRF18085BR3 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF power field effect transistors |
| 中文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-780, CASE 465-06, 2 PIN |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 610K |
| 代理商： | MRF18085BR3 |
1
MRF18085BR3 MRF18085BLSR3
Motorola, Inc. 2004
The RF MOSFET Line
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with
frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA, and multicarrier
amplifier applications.
GSM and GSM EDGE Performance, Full Frequency Band (1930 - 1990
MHz)
Power Gain - 12.5 dB (Typ) @ 85 Watts CW
Efficiency - 50% (Typ) @ 85 Watts CW
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency, and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 5:1 VSWR, @ 26 Vdc, @ P1dB Output Power,
@ f = 1930 MHz
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal Impedance Parameters
Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40
μ″
Nominal.
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
65
Vdc
Gate-Source Voltage
V
GS
-0.5, +15
Vdc
Total Device Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
273
1.56
Watts
W/
°
C
Storage Temperature Range
T
stg
- 65 to +150
°
C
Operating Junction Temperature
T
J
200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value (1)
Unit
Thermal Resistance, Junction to Case
R
θ
JC
0.79
°
C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
(1) Refer to AN1955/D,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.motorola.com/semiconductors/rf.
Select Documentation/Application Notes - AN1955.
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF18085B/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF18085BR3
MRF18085BLSR3
GSM/GSM EDGE
1.9 - 1.99 GHz, 85 W, 26 V
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 465-06, STYLE 1
NI-780
MRF18085BR3
CASE 465A-06, STYLE 1
NI-780S
MRF18085BLSR3
REV 3
F
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF18090A | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:1.80 - 1.88 GHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETS |
| MRF18090AR3 | 功能描述:IC MOSFET RF N-CHAN NI-880 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測(cè)試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測(cè)試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF18090AS | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:1.80 - 1.88 GHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETS |
| MRF18090B | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF18090BR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
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