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參數資料
| 型號： | MRF184 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CASE 360B-04, 3 PIN |
| 文件頁數： | 1/12頁 |
| 文件大?。?/td> | 348K |
| 代理商： | MRF184 |
LIFETIME
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LAST
ORDER
31JUL04
LAST
SHIP
31JAN05
1
MRF184 MRF184SR1
MOTOROLA RF DEVICE DATA
The RF MOSFET Line
RF Power Field-Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications at frequen-
cies to 1.0 GHz. The high gain and broadband performance of these devices
make them ideal for large–signal, common source amplifier applications in 28
volt base station equipment.
Guaranteed Performance @ 945 MHz, 28 Volts
Output Power = 60 Watts
Power Gain = 11.5 dB
Efficiency = 53%
Characterized with Series Equivalent Large–Signal
Impedance Parameters
S–Parameter Characterization at High Bias Levels
Excellent Thermal Stability
100% Tested for Load Mismatch Stress at all Phase
Angles with 5:1 VSWR @ 28 Vdc, 945 MHz, 60 Watts CW
MRF184SR1 Available only in Tape and Reel;
500 Units per 24 mm, 13 inch Reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
65
Vdc
Gate–Source Voltage
VGS
±20
Vdc
Drain Current — Continuous
ID
7
Adc
Total Device Dissipation @ TC = 70°C
Derate above 70
°C
PD
118
0.9
Watts
W/
°C
Storage Temperature Range
Tstg
– 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
1.1
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 V, ID = 1 mAdc)
V(BR)DSS
65
–
Vdc
Zero Gate Voltage Drain Current
(VDS = 28 V, VGS = 0 V)
IDSS
–
1
Adc
Gate–Source Leakage Current
(VGS = 20 V, VDS = 0 V)
IGSS
–
1
Adc
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF184/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF184
MRF184SR1
1.0 GHz, 60 W, 28 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B–04, STYLE 1
(NI–360)
(MRF184)
CASE 360C–04, STYLE 1
(NI–360S)
(MRF184SR1)
Motorola, Inc. 2001
G
D
S
REV 8
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| MRF19085SR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF19085R3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MRF184R1 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF184S | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
| MRF184SR1 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF185 | 制造商:ASI 制造商全稱:ASI 功能描述:RF POWER MOSFET |
| MRF185_02 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:N-Channel Enhancement-Mode Lateral MOSFET |
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