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參數資料
| 型號： | MRF184R1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-360, CASE 360B-05, 3 PIN |
| 文件頁數： | 7/12頁 |
| 文件大小： | 1009K |
| 代理商： | MRF184R1 |
Archived 2005
A
R
C
H
IV
E
D
2
0
5
MRF184R1 MRF184SR1
4
MOTOROLA RF DEVICE DATA
G ps
,POWER
GAIN
(dB)
16
880
900
920
980
f, FREQUENCY (MHz)
15
14
13
940
960
VDD = 28 Vdc
IDQ = 400 mA
Pout = 60 W (CW)
VSWR
Gps
INPUT
VSWR
15.5
14.5
13.5
65
55
45
η
40
η
,EFFICIENCY
(%)
1.0
1.5
2.0
2.5
I D
,DRAIN
CURRENT
(A)
4
3
2
0
01
3
5
6
VGS, GATE VOLTAGE (VOLTS)
90
800
880 900
1000
f, FREQUENCY (MHz)
P out
,OUTPUT
POWER
(W
ATTS)
TYPICAL CHARACTERISTICS
Figure 8. Output Power versus Frequency
Figure 9. Drain Current versus Gate Voltage
80
40
10
0
VDS = 28 Vdc
140
100
60
0
010
20
30
50
VDS, DRAIN-SOURCE VOLTAGE (VOLTS)
C,
CAP
ACIT
ANCE
(pF)
Figure 10. Capacitance versus Voltage
VGS = 0 Vdc
f = 1.0 MHz
6
3
1
0
102030
35
VDS, DRAIN VOLTAGE (Vdc)
,DRAIN
CURRENT
(AMPS)
Figure 11. DC Safe Operating Area
TJ = 150°C
TF = 70°C
7
010
20
35
VDS, DRAIN VOLTAGE (Vdc)
Figure 12. DC Safe Operating Area
4.5
3
0
Figure 13. Performance in Broadband Circuit
TYPICAL DEVICE SHOWN
1.0 W
Pin = 2.5 W
VDD = 28 Vdc
IDQ = 400 mA
SINGLE TONE
840
980
940 960
60
20
24
3.5
2.5
1
20
515
25
40
45
35
Ciss
Coss
Crss
515
25
5
2.5
0.5
4
2
3.5
1.5
TJ = 175°C
TF = 70°C
515
25
30
5
3.5
1.5
6
4
2.5
0.5
I D
,DRAIN
CURRENT
(AMPS)
I D
0.5 W
0.5
1.5
80
40
2
1
860
820
920
70
30
50
120
5.5
4.5
6.5
5.5
60
50
35
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
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|---|---|
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