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參數資料
| 型號： | MRF184S |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CASE 360C-03, 2 PIN |
| 文件頁數： | 1/9頁 |
| 文件大小： | 194K |
| 代理商： | MRF184S |
1
MRF184 MRF184S
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
The RF MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications at frequen-
cies to 1.0 GHz. The high gain and broadband performance of these devices
makes them ideal for large–signal, common source amplifier applications in 28
volt base station equipment.
Guaranteed Performance @ 945 MHz, 28 Volts
Output Power = 60 Watts
Power Gain = 11.5 dB
Efficiency = 53%
Characterized with Series Equivalent Large–Signal
Impedance Parameters
S–Parameter Characterization at High Bias Levels
Excellent Thermal Stability
Capable of Handling 30:1 VSWR @ 28 Vdc,
945 MHz
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VGS
ID
PD
65
Vdc
Gate–Source Voltage
±
20
Vdc
Drain Current — Continuous
7
Adc
Total Device Dissipation @ TC = 70
°
C
Derate above 70
°
C
118
0.9
Watts
W/
°
C
Storage Temperature Range
Tstg
TJ
– 65 to +150
°
C
Operating Junction Temperature
200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
1.1
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 V, ID = 1 Adc)
V(BR)DSS
65
–
–
Vdc
Zero Gate Voltage Drain Current
(VDS = 28 V, VGS = 0 V)
IDSS
–
–
1
μ
Adc
Gate–Source Leakage Current
(VGS = 20 V, VDS = 0 V)
IGSS
–
–
1
μ
Adc
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF184/D
SEMICONDUCTOR TECHNICAL DATA
60 W, 1.0 GHz
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B–01, STYLE 1
(MRF184)
CASE 360C–03, STYLE 1
(MRF184S)
G
D
S
REV 2
相關PDF資料 |
PDF描述 |
|---|---|
| MRF185 | RF MOSFET(射頻MOS場效應管) |
| MRF186 | RF MOSFET(射頻MOS場效應管) |
| MRF187S | RF MOSFET(射頻MOS場效應管) |
| MRF187 | RF POWER FIELD EFFECT TRANSISTORS |
| MRF187R3 | ER 16 16S D/C PLAS |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MRF184SR1 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF185 | 制造商:ASI 制造商全稱:ASI 功能描述:RF POWER MOSFET |
| MRF185_02 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:N-Channel Enhancement-Mode Lateral MOSFET |
| MRF186 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:The RF MOSFET Line RF POWER FIELD-EFFECT TRANSISTOR Channel Enhancement?Mode Lateral MOSFET |
| MRF187 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
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