- 您現在的位置：買賣IC網 > PDF目錄369929 > MRF19120 (MOTOROLA INC) RF Power MOSFETs(RF功率MOS場效應管) PDF資料下載
參數資料
| 型號： | MRF19120 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF Power MOSFETs(RF功率MOS場效應管) |
| 中文描述： | 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-1230, CASE 375D-04, 5 PIN |
| 文件頁數： | 1/12頁 |
| 文件大小： | 178K |
| 代理商： | MRF19120 |
1
MRF19120 MRF19120S
MOTOROLA RF DEVICE DATA
Motorola, Inc. 2000
The RF Sub–Micron MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for CDMA base station applications at frequencies from 1930 to
1990 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applica-
tions. To be used in class AB for PCN–PCS/cellular radio and WLL applications.
CDMA Performance @ 1990 MHz, 26 Volts
IS–97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Thru 13
885 kHz — –47 dBc @ 30 kHz BW
1.25 MHz — –55 dBc @ 12.5 kHz BW
2.25 MHz — –55 dBc @ 1 MHz BW
Output Power — 15 Watts (Avg.)
Power Gain — 11.7 dB
Efficiency — 16%
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency, High Linearity
Integrated ESD Protection: Class 2 Human Body Model, Class M3
Machine Model
Ease of Design for Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR, @ 26 Vdc, 1990 MHz, 120 Watts (CW)
Output Power
S–Parameter Characterization at High Bias Levels
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal Impedance Parameters
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VGS
PD
65
Vdc
Gate–Source Voltage
+15, –0.5
Vdc
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
389
2.22
Watts
W/
°
C
Storage Temperature Range
Tstg
TJ
–65 to +150
°
C
Operating Junction Temperature
200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
0.45
°
C/W
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF19120/D
SEMICONDUCTOR TECHNICAL DATA
1990 MHz, 120 W, 26 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 375D–01, STYLE 2
(MRF19120)
CASE 375E–01, STYLE 2
(MRF19120S)
REV 1
相關PDF資料 |
PDF描述 |
|---|---|
| MRF19120S | RF Power MOSFETs(RF功率MOS場效應管) |
| MRF21030 | RF Power MOSFETs(RF功率MOS場效應管) |
| MRF21030S | RF Power MOSFETs(RF功率MOS場效應管) |
| MRF373 | The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF373S | The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MRF19120S | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF19125 | 制造商:Freescale Semiconductor 功能描述: 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-391 |
| MRF19125R3 | 功能描述:IC MOSFET RF N-CHAN NI-880 RoHS:是 類別:分離式半導體產品 >> RF FET 系列:- 產品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數據:- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF19125R5 | 功能描述:IC MOSFET RF N-CHAN NI-880 RoHS:是 類別:分離式半導體產品 >> RF FET 系列:- 產品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數據:- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF19125S | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs |
發布緊急采購，3分鐘左右您將得到回復。