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參數資料
| 型號： | MRF21030 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF Power MOSFETs(RF功率MOS場效應管) |
| 中文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CASE 465E-03, 3 PIN |
| 文件頁數： | 1/8頁 |
| 文件大?。?/td> | 147K |
| 代理商： | MRF21030 |
1
MRF21030 MRF21030S
MOTOROLA RF DEVICE DATA
Motorola, Inc. 2000
The RF MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for PCN and PCS base station applications from frequencies up to
2.0 to 2.2 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in class AB for PCN–PCS/cellular radio and WLL
applications.
Wideband CDMA Performance: –45 dB ACPR @ 4.096 MHz, 28 Volts
Output Power — 3.5 Watts
Power Gain — 13.5 dB
Efficiency — 25%
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency and High Linearity
Ease of Design for Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2.11 GHz, 30 Watts CW
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal Impedance Parameters
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VGS
PD
65
Vdc
Gate–Source Voltage
+15, –0.5
Vdc
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
83.3
0.48
Watts
W/
°
C
Storage Temperature Range
Tstg
TJ
–65 to +200
°
C
Operating Junction Temperature
200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
2.1
°
C/W
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF21030/D
SEMICONDUCTOR TECHNICAL DATA
2.2 GHz, 30 W, 28 V
LATERAL N–CHANNEL
RF POWER MOSFETs
CASE 465E–02, STYLE 1
(MRF21030)
CASE 465F–01, STYLE 1
(MRF21030S)
相關PDF資料 |
PDF描述 |
|---|---|
| MRF21030S | RF Power MOSFETs(RF功率MOS場效應管) |
| MRF373 | The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF373S | The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF587 | High-Frequency NPN Transistor(高頻率NPN晶體管) |
| MRF6401 | RF LINEAR POWER TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MRF21030D | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENANCEMENT- MODE LATERAL MOSFETS |
| MRF21030LR3 | 功能描述:射頻MOSFET電源晶體管 30W 2.2GHZ LDMOS NI400L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF21030LR5 | 功能描述:IC MOSFET RF N-CHAN NI-400 RoHS:是 類別:分離式半導體產品 >> RF FET 系列:- 產品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數據:- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF21030LSR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF21030R3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENANCEMENT- MODE LATERAL MOSFETS |
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