- 您現在的位置：買賣IC網 > PDF目錄98036 > MRF19120S (FREESCALE SEMICONDUCTOR INC) 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF資料下載
參數資料
| 型號： | MRF19120S |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-1230S, CASE 375E-03, 5 PIN |
| 文件頁數： | 5/12頁 |
| 文件大小： | 368K |
| 代理商： | MRF19120S |
MRF19120 MRF19120S
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS (1)
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10 Adc)
V(BR)DSS
65
—
Vdc
Gate–Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
1
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
—
10
Adc
ON CHARACTERISTICS (1)
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
gfs
—
4.8
—
S
Gate Threshold Voltage
(VDS = 10 V, ID = 200 A)
VGS(th)
2.5
3
3.8
Vdc
Gate Quiescent Voltage
(VDS = 26 V, ID = 500 mA)
VGS(Q)
3
3.9
5
Vdc
Drain–Source On–Voltage
(VGS = 10 V, ID = 2 A)
VDS(on)
—
0.38
0.5
Vdc
DYNAMIC CHARACTERISTICS (1)
Reverse Transfer Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Crss
—
2.8
—
pF
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2)
Common–Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2
500 mA, MRF19120
f1 = 1990.0 MHz, f2 = 1990.1 MHz)
MRF19120S
Gps
10.7
10.5
11.7
—
dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2
500 mA,
f1 = 1990.0 MHz, f2 = 1990.1 MHz)
η
30
34
—
%
Intermodulation Distortion
(VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2
500 mA, MRF19120
f1 = 1990.0 MHz, f2 = 1990.1 MHz)
MRF19120S
IMD
—
–31
–28
–27
dB
Input Return Loss
(VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2
500 mA,
f1 = 1990.0 MHz, f2 = 1990.1 MHz)
IRL
—
–12
–9
dB
Common–Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2
500 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Gps
—
11.7
—
dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2
500 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
η
—
34
—
%
Intermodulation Distortion
(VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2
500 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
IMD
—
–31
—
dB
Input Return Loss
(VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2
500 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
IRL
—
–14
—
dB
Power Output, 1 dB Compression Point
(VDD = 26 Vdc, CW, IDQ = 2
500 mA, f1 = 1990.0 MHz)
P1dB
—
120
—
Watts
Common–Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 120 W CW, IDQ = 2
500 mA,
f1 = 1990.0 MHz)
Gps
—
11
—
dB
(1) Each side of device measured separately.
(2) Device measured in push–pull configuration.
相關PDF資料 |
PDF描述 |
|---|---|
| MRF19125R3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF19125SR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF21045LSR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF21045R3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF21045SR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MRF19125 | 制造商:Freescale Semiconductor 功能描述: 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-391 |
| MRF19125R3 | 功能描述:IC MOSFET RF N-CHAN NI-880 RoHS:是 類別:分離式半導體產品 >> RF FET 系列:- 產品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數據:- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF19125R5 | 功能描述:IC MOSFET RF N-CHAN NI-880 RoHS:是 類別:分離式半導體產品 >> RF FET 系列:- 產品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數據:- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF19125S | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF19125SR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
發布緊急采購，3分鐘左右您將得到回復。