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參數資料
| 型號： | MRF21045SR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-400S, CASE 465F-04, 2 PIN |
| 文件頁數： | 1/12頁 |
| 文件大小： | 406K |
| 代理商： | MRF21045SR3 |
1
MRF21045R3 MRF21045LR3 MRF21045SR3 MRF21045LSR3
MOTOROLA RF DEVICE DATA
The RF MOSFET Line
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for W-CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
tions. To be used in Class AB for PCN-PCS/cellular radio and WLL
applications.
Typical 2-carrier W-CDMA Performance for VDD = 28 Volts, IDQ = 500 mA,
f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz,
Adjacent Channels measured over 3.84 MHz Bandwidth at f1 -5 MHz
and f2 +5 MHz, Distortion Products measured over a 3.84 MHz Bandwidth
at f1 -10 MHz and f2 +10 MHz, Peak/Avg. = 8.3 dB @ 0.01% Probability
on CCDF.
Output Power — 10 Watts Avg.
Efficiency — 23.5%
Gain — 15 dB
IM3 — -37.5 dBc
ACPR — -41 dBc
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 5:1 VSWR, @ 28 Vdc, 2170 MHz, 45 Watts CW
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal Impedance Parameters
In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
Low Gold Plating Thickness on Leads. L Suffix Indicates 40″ Nominal.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
65
Vdc
Gate-Source Voltage
VGS
-0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
105
0.60
Watts
W/°C
Storage Temperature Range
Tstg
-65 to +150
°C
Operating Junction Temperature
TJ
200
°C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M2 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
1.65
°C/W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF21045/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF21045R3
MRF21045LR3
MRF21045SR3
MRF21045LSR3
2170 MHz, 45 W, 28 V
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 465E-04, STYLE 1
NI-400
MRF21045R3, LR3
CASE 465F-04, STYLE 1
NI-400S
MRF21045SR3, LSR3
Motorola, Inc. 2003
REV 8
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MRF21060 | 制造商:Motorola Inc 功能描述:TRANSISTOR,MOSFET,N-CHANNEL,65V V(BR)DSS,SOT-391VAR |
| MRF21060LR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF21060LSR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF21060R3 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| MRF21060S | 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-391BVAR |
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