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參數資料
| 型號： | MRF21125R3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-880, CASE 465B-02, 2 PIN |
| 文件頁數： | 1/12頁 |
| 文件大小： | 437K |
| 代理商： | MRF21125R3 |
MRF21125R3 MRF21125SR3
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for W-CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
tions. To be used in Class AB for PCN - PCS/cellular radio and WLL
applications.
Typical 2-Carrier W-CDMA Performance for VDD = 28 Volts, IDQ =
1600 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz, Channel bandwidth =
3.84 MHz, adjacent channels at ± 5 MHz , ACPR and IM3 measured in
3.84 MHz bandwidth. Peak/Avg. = 8.5 dB @ 0.01% probability on CCDF.
Output Power — 20 Watts
Efficiency — 18%
Gain — 13 dB
IM3 — -43 dBc
ACPR — -45 dBc
Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 125 Watts CW
Output Power
Features
Internally Matched for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal Impedance Parameters
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +65
Vdc
Gate-Source Voltage
VGS
-0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
330
1.89
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
RθJC
0.53
°C/W
Document Number: MRF21125
Rev. 9, 5/2006
Freescale Semiconductor
Technical Data
MRF21125R3
MRF21125SR3
2110-2170 MHz, 125 W, 28 V
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 465C-02, STYLE 1
NI-880S
MRF21125SR3
CASE 465B-03, STYLE 1
NI-880
MRF21125R3
Freescale Semiconductor, Inc., 2006. All rights reserved.
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