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參數資料
| 型號： | MRF275G |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CASE 375-04, 4 PIN |
| 文件頁數： | 1/16頁 |
| 文件大小： | 262K |
| 代理商： | MRF275G |
The RF MOSFET Line
Power Field-Effect Transistor
N–Channel Enhancement–Mode
Designed primarily for wideband large–signal output and driver stages from
100 – 500 MHz.
Guaranteed Performance @ 500 MHz, 28 Vdc
Output Power — 150 Watts
Power Gain — 10 dB (Min)
Efficiency — 50% (Min)
100% Tested for Load Mismatch at all Phase Angles with VSWR 30:1
Overall Lower Capacitance @ 28 V
Ciss — 135 pF
Coss — 140 pF
Crss — 17 pF
Simplified AVC, ALC and Modulation
Typical data for power amplifiers in industrial and
commercial applications:
Typical Performance @ 400 MHz, 28 Vdc
Output Power — 150 Watts
Power Gain — 12.5 dB
Efficiency — 60%
Typical Performance @ 225 MHz, 28 Vdc
Output Power — 200 Watts
Power Gain — 15 dB
Efficiency — 65%
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
65
Vdc
Drain–Gate Voltage
(RGS = 1.0 M)
VDGR
65
Vdc
Gate–Source Voltage
VGS
±40
Adc
Drain Current — Continuous
ID
26
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
400
2.27
Watts
W/
°C
Storage Temperature Range
Tstg
– 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
0.44
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
150 W, 28 V, 500 MHz
N–CHANNEL MOS
BROADBAND
100 – 500 MHz
RF POWER FET
CASE 375–04, STYLE 2
MRF275G
D
G
S
(FLANGE)
D
G
Order this document
by MRF275G/D
SEMICONDUCTOR TECHNICAL DATA
1
REV 1
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MRF275L | 功能描述:射頻MOSFET電源晶體管 5-500MHz 100Watts 28Volt Gain 8.8dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF281 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF281SR1 | 功能描述:IC MOSFET RF N-CHAN NI-200S RoHS:是 類別:分離式半導體產品 >> RF FET 系列:- 產品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數據:- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF281SR1_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF281ZR1 | 功能描述:IC MOSFET RF N-CHAN NI-200Z RoHS:是 類別:分離式半導體產品 >> RF FET 系列:- 產品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數據:- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
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