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參數資料
| 型號： | MRF282SR1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-200S, CASE 458B-03, 2 PIN |
| 文件頁數： | 1/12頁 |
| 文件大小： | 308K |
| 代理商： | MRF282SR1 |
MRF282SR1 MRF282ZR1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for Class A and Class AB PCN and PCS base station applications
with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and
multicarrier amplifier applications.
Specified Two-Tone Performance @ 2000 MHz, 26 Volts
Output Power — 10 Watts PEP
Power Gain — 10.5 dB
Efficiency — 28%
Intermodulation Distortion — -31 dBc
Specified Single-Tone Performance @ 2000 MHz, 26 Volts
Output Power — 10 Watts CW
Power Gain — 9.5 dB
Efficiency — 35%
Capable of Handling 10:1 VSWR, @ 26 Vdc,
2000 MHz, 10 Watts CW Output Power
Features
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal
Impedance Parameters
RoHS Compliant
Available in Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +65
Vdc
Gate-Source Voltage
VGS
±20
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
60
0.34
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
RθJC
4.2
°C/W
Table 3. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
(VGS = 0, ID = 10 μAdc)
V(BR)DSS
65
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0)
IDSS
—
1.0
μAdc
Gate-Source Leakage Current
(VGS = 20 Vdc, VDS = 0)
IGSS
—
1.0
μAdc
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Document Number: MRF282
Rev. 15, 5/2006
Freescale Semiconductor
Technical Data
MRF282SR1
MRF282ZR1
2000 MHz, 10 W, 26 V
LATERAL N-CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 458B-03, STYLE 1
NI-200S
MRF282SR1
CASE 458C-03, STYLE 1
NI-200Z
MRF282ZR1
Freescale Semiconductor, Inc., 2006. All rights reserved.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MRF282Z | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
| MRF282ZR1 | 功能描述:射頻MOSFET電源晶體管 RF PWR FET SOE PKG RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF284 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF284C | 制造商:Motorola Inc 功能描述:284C |
| MRF284LR1 | 制造商:Freescale Semiconductor 功能描述: |
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