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參數資料
| 型號： | MRF284LSR1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-360S, CASE 360C-05, 2 PIN |
| 文件頁數： | 1/11頁 |
| 文件大小： | 744K |
| 代理商： | MRF284LSR1 |
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MRF284LSR1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
Designed for PCN and PCS base station applications with frequencies from
1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier
applications. To be used in Class A and Class AB for PCN--PCS/cellular radio
and wireless local loop.
Specified Two--Tone Performance @ 2000 MHz, 26 Volts
Output Power = 30 Watts PEP
Power Gain = 9 dB
Efficiency = 30%
Intermodulation Distortion = --29 dBc
Typical Single--Tone Performance at 2000 MHz, 26 Volts
Output Power = 30 Watts CW
Power Gain = 9.5 dB
Efficiency = 45%
Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 30 Watts CW
Output Power
Features
Excellent Thermal Stability
Characterized with Series Equivalent Large--Signal Impedance Parameters
Low Gold Plating Thickness on Leads. L Suffix Indicates 40″ Nominal.
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
±
20
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
87.5
0.5
W
W/°C
Storage Temperature Range
Tstg
--65 to +150
°
C
Case Operating Temperature
TC
150
°
C
Operating Junction Temperature
TJ
200
°
C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
RθJC
2.0
°
C/W
Table 3. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain--Source Breakdown Voltage
(VGS = 0, ID = 10 Adc)
V(BR)DSS
65
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0)
IDSS
—
1.0
Adc
Gate--Source Leakage Current
(VGS = 20 Vdc, VDS = 0)
IGSS
—
10
Adc
(continued)
NOTE -- CAUTION -- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Document Number: MRF284
Rev. 18, 10/2008
Freescale Semiconductor
Technical Data
MRF284LSR1
2000 MHz, 30 W, 26 V
LATERAL N--CHANNEL
BROADBAND
RF POWER MOSFET
CASE 360C--05, STYLE 1
NI--360S
Freescale Semiconductor, Inc., 2008. All rights reserved.
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