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參數(shù)資料
| 型號(hào)： | MRF372 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-860C3, CASE 375G-04, 4 PIN |
| 文件頁(yè)數(shù)： | 1/11頁(yè) |
| 文件大小： | 507K |
| 代理商： | MRF372 |
5-46
Freescale Semiconductor
Wireless RF Product Device Data
MRF372 MRF372R5
RF Power Field-Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequen-
cies from 470 to 860 MHz. The high gain and broadband performance of this
device make it ideal for large-signal, common source amplifier applications in
32 volt transmitter equipment.
Typical Narrowband Two-Tone Performance @ f1 = 857 MHz,
f2 = 863 MHz, 32 Volts
Output Power — 180 Watts PEP
Power Gain — 17 dB
Efficiency — 36%
IMD — -35 dBc
Typical Broadband Two-Tone Performance @ f1 = 857 MHz,
f2 = 863 MHz, 32 Volts
Output Power — 180 Watts PEP
Power Gain — 14.5 dB
Efficiency — 37%
IMD — -31 dBc
Internally Matched, Controlled Q, for Ease of Use
Integrated ESD Protection
100% Tested for Load Mismatch Stress at All Phase Angles
with 3:1 VSWR @ 32 Vdc, f1 = 857 MHz, f2 = 863 MHz, 180 Watts PEP
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal Impedance Parameters
Available in Tape and Reel. R5 Suffix = 50 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings (1)
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +68
Vdc
Gate-Source Voltage
VGS
-0.5, +15
Vdc
Drain Current - Continuous
ID
17
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
350
2.0
W
W/°C
Storage Temperature Range
Tstg
-65 to +150
°C
Operating Junction Temperature
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
RθJC
0.5
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
1. Each side of device measured separately.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Rev. 8, 12/2004
Freescale Semiconductor
Technical Data
470 - 860 MHz, 180 W, 32 V
LATERAL N-CHANNEL
RF POWER MOSFET
CASE 375G-04, STYLE 1
NI-860C3
MRF372
MRF372R5
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF373R1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF373SR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF373 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF373S | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF374A | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF372D | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTOR |
| MRF372R3 | 功能描述:射頻MOSFET電源晶體管 180W 860MHZ NI-860MOD RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF372R5 | 功能描述:射頻MOSFET電源晶體管 180W 860MHZ NI-860MOD RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF373 | 制造商:Freescale Semiconductor 功能描述: |
| MRF373A | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
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