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參數(shù)資料
| 型號(hào)： | MRF372 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-860C3, CASE 375G-04, 4 PIN |
| 文件頁(yè)數(shù)： | 4/11頁(yè) |
| 文件大小： | 507K |
| 代理商： | MRF372 |
MRF372 MRF372R5
5-47
Freescale Semiconductor
Wireless RF Product Device Data
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics (1)
Drain-Source Breakdown Voltage
(VGS = 0 Vdc, ID =10 A)
V(BR)DSS
68
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 32 Vdc, VGS = 0 Vdc)
IDSS
—
10
Adc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
1
Adc
On Characteristics (1)
Gate Threshold Voltage
(VDS = 10 V, ID = 200 A)
VGS(th)
2
3
4
Vdc
Gate Quiescent Voltage
(VDS = 32 V, ID = 100 mA)
VGS(Q)
2.5
3.5
4.5
Vdc
Drain-Source On-Voltage
(VGS = 10 V, ID = 3 A)
VDS(on)
—
0.28
0.45
Vdc
Forward Transconductance
(VDS = 10 V, ID = 3 A)
gfs
—
2.6
—
S
Dynamic Characteristics (1)
Input Capacitance (Includes Input Matching Capacitance)
(VDS = 32 V, VGS = 0 V, f = 1 MHz)
Ciss
—
260
—
pF
Output Capacitance
(VDS = 32 V, VGS = 0 V, f = 1 MHz)
Coss
—
69
—
pF
Reverse Transfer Capacitance
(VDS = 32 V, VGS = 0 V, f = 1 MHz)
Crss
—
2.5
—
pF
Functional Characteristics, Narrowband Operation (In Freescale MRF372 Narrowband Circuit, 50 ohm system) (2)
Common Source Power Gain
(VDD = 32 V, Pout = 180 W PEP, IDQ = 2 x 400 mA,
f1 = 857 MHz, f2 = 863 MHz)
Gps
16
17
—
dB
Drain Efficiency
(VDD = 32 V, Pout = 180 W PEP, IDQ = 2 x 400 mA,
f1 = 857 MHz, f2 = 863 MHz)
η
33
36
—
%
Intermodulation Distortion
(VDD = 32 Vdc, Pout = 180 W PEP, IDQ = 2 x 400 mA,
f1 = 857 MHz, f2 = 863 MHz)
IMD
—
-35
-31
dBc
Output Mismatch Stress
(VDD = 32 Vdc, Pout = 180 W PEP, IDQ = 2 x 400 mA,
f1 = 857 MHz, f2 = 863 MHz, VSWR = 3:1 at all phase angles
of test)
ψ
No Degradation in Output Power
Typical Characteristics, Broadband Operation (In Freescale MRF372 Broadband Circuit, 50 ohm system) (2)
Common Source Power Gain
(VDD = 32 Vdc, Pout = 180 W PEP, IDQ = 2 x 500 mA,
f1 = 857 MHz, f2 = 863 MHz)
Gps
—
14.5
—
dB
Drain Efficiency
(VDD = 32 Vdc, Pout = 180 W PEP, IDQ = 2 x 500 mA,
f1 = 857 MHz, f2 = 863 MHz)
η
—
37
—
%
Intermodulation Distortion
(VDD = 32 Vdc, Pout = 180 W PEP, IDQ = 2 x 500 mA,
f1 = 857 MHz, f2 = 863 MHz)
IMD
—
-31
—
dBc
1. Each side of device measured separately.
2. Measured in push-pull configuration.
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| MRF373R1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF372D | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTOR |
| MRF372R3 | 功能描述:射頻MOSFET電源晶體管 180W 860MHZ NI-860MOD RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF372R5 | 功能描述:射頻MOSFET電源晶體管 180W 860MHZ NI-860MOD RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF373 | 制造商:Freescale Semiconductor 功能描述: |
| MRF373A | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
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