- 您現在的位置：買賣IC網 > PDF目錄98036 > MRF21125R3 (FREESCALE SEMICONDUCTOR INC) S BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF資料下載
參數資料
| 型號： | MRF21125R3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-880, CASE 465B-02, 2 PIN |
| 文件頁數： | 9/12頁 |
| 文件大小： | 437K |
| 代理商： | MRF21125R3 |
RF Device Data
Freescale Semiconductor
MRF21125R3 MRF21125SR3
TYPICAL CHARACTERISTICS
Figure 3. 2-Carrier (10 MHz Spacing)
W-CDMA Spectrum
f, FREQUENCY (MHz)
110
120
70
Figure 4. 2-Carrier W-CDMA ACPR, IM3,
Power Gain and Drain Efficiency versus
Output Power
Figure 5. CW Performance
Pin, INPUT POWER (WATTS)
0
Figure 6. Broadband Linearity Performance
f, FREQUENCY (MHz)
Figure 7. Intermodulation Distortion versus
Output Power
Pout, OUTPUT POWER (WATTS) PEP
100
0
2080
45
25
20
16
32
64
80
60
2140
55
16
10
1
60
2200
50
176
48
144
0
40
10
5
15
20
35
(dB)
Figure 8. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
12
14
1
11
10
13
2
Pout
VDD = 28 Vdc
IDQ = 1600 mA
f = 2120 MHz
VDD = 28 Vdc
Pout = 125 W (PEP)
IDQ = 1600 mA
TwoTone Measurement, 10 MHz Tone Spacing
IMD,
INTERMODULA
TION
DIST
OR
TION
(dBc)
G
ps
,POWER
GAIN
(dB)
10
100
VDD = 28 Vdc
f1 = 2112.5 MHz, f2 = 2122.5 MHz
TwoTone Measurement, 10 MHz Tone Spacing
50
40
90
100
40
30
2000 mA
1600 mA
1300 mA
1000 mA
30
VDD = 28 Vdc
f1 = 2112.5 MHz, f2 = 2122.5 MHz
TwoTone Measurement, 10 MHz Tone Spacing
2000 mA
1600 mA
1300 mA
1000 mA
46
8
10
12
14
80
96
128
112
160
P
,OUTPUT
POWER
(W
A
TTS)
out
P1dB = 135 W
P3dB = 156 W
6
10
14
18
22
26
30
34
38
42
46
50
,DRAIN
EFFICIENCY
(%),
η
G
ps
,POWER
GAIN
(dB)
,DRAIN
EFFICIENCY
(%),
η
G
ps
,POWER
GAIN
(dB)
2100
2120
2180
2160
25
30
35
40
35
30
25
20
15
10
5
0
IMD
IRL
IRL,
INPUT
RETURN
LOSS
(dB)
3.84 MHz
Channel BW
IM3 in
3.84 MHz BW
+IM3 in
3.84 MHz BW
ACPR in
3.84 MHz BW
+ACPR in
3.84 MHz BW
IMD,
INTERMODULA
TION
DIST
OR
TION
(dBc)
η
Gps
η
Gps
,DRAIN
EFFICIENCY
(%),
η
G
ps
,POWER
GAIN
(dB)
±
10
24
Pout, OUTPUT POWER (WATTS, AVG. (WCDMA))
30
20
816
32
25
5
10
60
35
45
20
40
55
IM3
η
VDD = 28 Vdc, IDQ = 1600 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz
Channel Spacing (Channel Bandwidth): 10 MHz @ 3.84 MHz BW
Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF)
20
412
28
50
Gps
ACPR
IM3
(dBc),
±
ACPR
(dBc)
15
30
25
0
5
相關PDF資料 |
PDF描述 |
|---|---|
| MRF21125SR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF21180S | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF21180S | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF275G | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF282SR1 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MRF21125S | 制造商:Motorola Inc 功能描述: 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-391BVAR |
| MRF21125SR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF21180 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistor |
| MRF21180R6 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistor |
| MRF21180R6_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
發布緊急采購，3分鐘左右您將得到回復。