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參數資料
| 型號： | MRF21085SR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-780S, CASE 465A-06, 2 PIN |
| 文件頁數： | 1/12頁 |
| 文件大小： | 562K |
| 代理商： | MRF21085SR3 |
MRF21085R3 MRF21085SR3 MRF21085LSR3
MOTOROLA RF DEVICE DATA
The RF MOSFET Line
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for W-CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
tions. To be used in Class AB for PCN - PCS/cellular radio and WLL
applications.
Typical 2-carrier W-CDMA Performance for VDD = 28 Volts,
IDQ = 1000 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth =
3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 -5 MHz
and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW
@ f1 -10 MHz and f2 +10 MHz, Peak/Avg. = 8.3 dB @ 0.01% Probability
on CCDF.
Output Power — 19 Watts Avg.
Power Gain — 13.6 dB
Efficiency — 23%
IM3 — -37.5 dBc
ACPR — -41 dBc
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 5:1 VSWR, @ 28 Vdc, 2170 MHz, 90 Watts CW
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal Impedance Parameters
Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40″ Nominal.
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
65
Vdc
Gate-Source Voltage
VGS
-0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
224
1.28
Watts
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value (1)
Unit
Thermal Resistance, Junction to Case
RθJC
0.78
°C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
(1) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf.
Select Documentation/Application Notes - AN1955.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF21085/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF21085R3
MRF21085SR3
MRF21085LSR3
2170 MHz, 90 W, 28 V
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 465-06, STYLE 1
NI-780
MRF21085R3
CASE 465A-06, STYLE 1
NI-780S
MRF21085SR3, MRF21085LSR3
Motorola, Inc. 2004
REV 6
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Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
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