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參數資料
| 型號： | MRF21085SR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-780S, CASE 465A-06, 2 PIN |
| 文件頁數： | 6/12頁 |
| 文件大小： | 562K |
| 代理商： | MRF21085SR3 |
MRF21085R3 MRF21085SR3 MRF21085LSR3
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (continued)
Two-Tone Common-Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 1000 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
Gps
—
13.6
—
dB
Two-Tone Drain Efficiency
(VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 1000 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
η
—
36
—
%
Two-Tone Intermodulation Distortion
(VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 1000 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
IMD
—
-31
—
dBc
Input Return Loss
(VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 1000 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
IRL
—
-12
—
dB
Pout, 1 dB Compression Point
(VDD = 28 Vdc, IDQ = 1000 mA, f = 2170 MHz)
P1dB
—
100
—
W
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Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
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| MRF21090 | 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, RFMOD |
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