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參數資料
| 型號： | MRF284LR1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-360, CASE 360B-05, 2 PIN |
| 文件頁數： | 11/12頁 |
| 文件大小： | 470K |
| 代理商： | MRF284LR1 |
8
RF Device Data
Freescale Semiconductor
MRF284LR1
TYPICAL CHARACTERISTICS
I D
,D
R
A
IN
C
U
R
E
N
T
(A
dc
)
Figure 10. DC Safe Operating Area
VDD, DRAIN SUPPLY VOLTAGE (Vdc)
Figure 11. Capacitance versus
Drain Source Voltage
VDS, DRAIN SOURCE VOLTAGE (VOLTS)
28
12
20
4
0
100
10
1
Figure 12. Class A Third Order Intercept Point
Pin, INPUT POWER (dBm)
60
40
30
20
10
0
60
40
20
0
--20
--80
C
,C
A
P
A
C
IT
A
N
C
E
(p
F
)
P o
ut
,O
U
T
P
U
T
P
O
W
E
R
(d
B
m
)
24
Crss
16
8
FUNDAMENTAL
3rd Order
Coss
50
35
25
15
5
45
55
50
30
10
--10
--30
-- 40
--60
-- 50
--70
1
0
28
24
20
16
12
8
4
0
Tflange = 75°C
Tflange = 100°C
TJ = 175°C
3
2
Ciss
--90
VDD = 26 Vdc
IDQ = 1.8 Adc
f1 = 2000.0 MHz
f2 = 2000.1 MHz
1.0
Figure 13. 1920--2000 MHz Broadband Circuit Performance
f, FREQUENCY (MHz)
1920
11
G
ps
,G
A
IN
(d
B
)
10
9
8
7
6
5
4
3
1940
1960
1980
2000
VDD = 26 Vdc
Pout = 30 W (PEP), IDQ = 200 mA
Two--Tone
Frequency Delta = 100 kHz
Gps
η
IMD
VSWR
45
--32
--40
40
30
--36
2.0
3.0
IN
P
U
T
V
S
W
R
E
F
IC
IE
N
C
Y
(%
)
35
IN
T
E
R
M
O
D
U
LA
T
IO
N
D
IS
T
O
R
T
IO
N
(d
B
c)
TJ, JUNCTION TEMPERATURE (°C)
250
200
150
100
50
0
1.E+10
1.E+09
1.E+07
1.E+06
1.E+05
M
T
F
FA
C
T
O
R
(H
O
U
R
S
x
A
M
P
S
)
This graph displays calculated MTTF in hours x ampere2 drain current.
Life tests at elevated temperature have correlated to better than ±10%
of the theoretical prediction for metal failure. Divide MTTF factor by ID2
for MTTF in a particular application.
1.E+08
2
1.E+04
Figure 14. MTTF Factor versus Junction Temperature
L
IF
E
T
IM
E
B
U
Y
L
A
S
T
O
R
D
E
R
3
O
C
T
0
8
L
A
S
T
S
H
IP
1
4
M
A
Y
0
9
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