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參數(shù)資料
型號(hào): MRF284R1
廠商: FREESCALE SEMICONDUCTOR INC
元件分類(lèi): 功率晶體管
英文描述: S BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: NI-360, CASE 360B-05, 3 PIN
文件頁(yè)數(shù): 5/12頁(yè)
文件大?。?/td> 425K
代理商: MRF284R1
MRF284R1 MRF284LSR1
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 150 Adc)
VGS(th)
2.0
3.0
4.0
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 200 mAdc)
VGS(q)
3.0
4.0
5.0
Vdc
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 1.0 Adc)
VDS(on)
0.3
0.6
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 1.0 Adc)
gfs
1.5
S
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
43
pF
Output Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)
Coss
23
pF
Reverse Transfer Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)
Crss
1.4
pF
FUNCTIONAL TESTS (in Motorola Test Fixture, 50 ohm system)
Common–Source Power Gain
(VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Gps
9
10.5
dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
η
30
35
%
Intermodulation Distortion
(VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
IMD
–32
–29
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
IRL
–15
–9
dB
Common–Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Gps
9
10.4
dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
η
35
%
Intermodulation Distortion
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
IMD
–34
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
IRL
–15
–9
dB
Common–Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 30 W CW, IDQ = 200 mA,
f1 = 2000.0 MHz)
Gps
8.5
9.5
dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 30 W CW, IDQ = 200 mA,
f1 = 2000.0 MHz)
η
35
45
%
Output Mismatch Stress
(VDD = 26 Vdc, Pout = 30 W CW, IDQ = 200 mA,
f1 = 2000.0 MHz, VSWR = 10:1,
at All Phase Angles)
Ψ
No Degradation In Output Power
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