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參數(shù)資料
| 型號(hào)： | MRF377R5 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-860C3, CASE 375G-04, 5 PIN |
| 文件頁(yè)數(shù)： | 1/11頁(yè) |
| 文件大小： | 804K |
| 代理商： | MRF377R5 |
5-72
Freescale Semiconductor
Wireless RF Product Device Data
MRF377 MRF377R3 MRF377R5
RF Power Field-Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequen-
cies from 470 to 860 MHz. The high gain and broadband performance of this
device make it ideal for large-signal, common source amplifier applications in 32
volt digital television transmitter equipment.
Typical Broadband DVBT OFDM Performance @ 470-860 MHz, 32 Volts,
IDQ = 2.0 A, 8K Mode, 64 QAM
Output Power — 45 Watts Avg.
Power Gain ≥ 16.7 dB
Efficiency ≥ 21%
ACPR ≤ -58 dBc
Typical Broadband ATSC 8VSB Performance @ 470-860 MHz, 32 Volts,
IDQ = 2.0 A
Output Power — 80 Watts Avg.
Power Gain ≥ 16.5 dB
Efficiency ≥ 27.5%
IMD ≤ -31.3 dBc
Internally Input and Output Matched for Ease of Use
Integrated ESD Protection
Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 45 Watts DVBT
OFDM Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal Impedance Parameters
Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
R5 Suffix = 50 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings (1)
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +65
Vdc
Gate-Source Voltage
VGS
-0.5, +15
Vdc
Drain Current - Continuous
ID
17
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
486
2.78
W
W/°C
Storage Temperature Range
Tstg
-65 to +150
°C
Operating Junction Temperature
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
RθJC
0.36
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
Charge Device Model
7 (Minimum)
1. Each side of device measured separately.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Rev. 1, 12/2004
Freescale Semiconductor
Technical Data
470 - 860 MHz, 240 W, 32 V
LATERAL N-CHANNEL
RF POWER MOSFET
CASE 375G-04, STYLE 1
NI-860C3
MRF377
MRF377R3
MRF377R5
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