- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄98037 > MRF5S19150S (MOTOROLA INC) L BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | MRF5S19150S |
| 廠(chǎng)商： | MOTOROLA INC |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-880S, CASE 465C-02, 2 PIN |
| 文件頁(yè)數(shù)： | 1/12頁(yè) |
| 文件大小： | 457K |
| 代理商： | MRF5S19150S |
1
MRF5S19150 MRF5S19150R3 MRF5S19150S MRF5S19150SR3
MOTOROLA RF DEVICE DATA
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for PCN and PCS base station applications at frequencies from
1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multic arrier amplifier
applications.
Typical 2–Carrier N–CDMA Performance for VDD = 28 Volts,
Pout = 32 Watts, IDQ = 1400 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz
IS–95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)
1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured
over a 30 kHz Bandwidth at f1 –885 kHz and f2 +885 kHz. Distortion
Products Measured over 1.2288 MHz Bandwidth at f1 –2.5 MHz and
f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Output Power — 32 Watts Avg.
Power Gain — 14 dB
Efficiency — 26%
ACPR — –50 dB
IM3 — –36.5 dBc
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 5:1 VSWR, @ 28 Vdc, f1 = 1960 MHz,
100 Watts CW Output Power
Excellent Thermal Stability
Qualified Up to a Maximum of 32 V Operation
Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
65
Vdc
Gate–Source Voltage
VGS
–0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
357
2
Watts
W/
°C
Storage Temperature Range
Tstg
–65 to +150
°C
Operating Junction Temperature
TJ
200
°C
CW Operation
CW
100
Watts
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
Case Temperature 80
°C, 100 W CW
Case Temperature 80
°C, 32 W CW
RθJC
0.49
0.53
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF5S19150/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF5S19150
MRF5S19150R3
MRF5S19150S
MRF5S19150SR3
1990 MHz, 32 W, 28 V
LATERAL N–CHANNEL
RF POWER MOSFETs
CASE 465C–02, STYLE 1
NI–880S
MRF5S19150S, R3
CASE 465B–03, STYLE 1
NI–880
MRF5S19150, R3
Motorola, Inc. 2003
REV 0
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF5S21045MBR1 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| MRF5S21045MR1 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| MRF5S21045NR1 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| MRF5S21045NBR1 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| MRF5S21090LR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF5S19150SR3 | 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:RF Power Field Effect Transistors |
| MRF5S21045 | 制造商:FREESCALE 制造商全稱(chēng):Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF5S21045MBR1 | 功能描述:MOSFET RF N-CH 28V 10W TO272-4 RoHS:否 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類(lèi)型:N 通道 JFET 頻率:- 增益:- 電壓 - 測(cè)試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測(cè)試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁(yè)面:1558 (CN2011-ZH PDF) 其它名稱(chēng):MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF5S21045MR1 | 功能描述:MOSFET RF N-CH 28V 10W TO270-4 RoHS:否 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類(lèi)型:N 通道 JFET 頻率:- 增益:- 電壓 - 測(cè)試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測(cè)試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁(yè)面:1558 (CN2011-ZH PDF) 其它名稱(chēng):MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF5S21045NBR1 | 功能描述:射頻MOSFET電源晶體管 2170MHZ 10W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。