- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371145 > MRF652 (MOTOROLA INC) RF POWER TRANSISTORS NPN SILICON PDF資料下載
參數(shù)資料
| 型號(hào)： | MRF652 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF POWER TRANSISTORS NPN SILICON |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CASE 244-04, 4 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 111K |
| 代理商： | MRF652 |
1
MRF652 MRF652S
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1995
The RF Line
Designed for 12.5 Vdc UHF large–signal, amplifier applications in industrial
and commercial FM equipment operating to 512 MHz.
Guaranteed 12.5 Volt, 512 MHz Characteristics
Output Power = 5.0 Watts
Minimum Gain = 10 dB
Efficiency = 65% (Typ)
Typical Performance at 512 MHz, 12.5 V, 5.0 W Output = 6.0 dB
Series Equivalent Large–Signal Characterization
Gold Metallized, Emitter Ballasted for Long Life and Reliability
Capable of 30:1 VSWR Load Mismatch at 15.5 V Supply Voltage
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
PD
16
Vdc
Collector–Base Voltage
36
Vdc
Emitter–Base Voltage
4.0
Vdc
Collector Current — Continuous
2.0
Adc
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
25
143
Watts
mW/
°
C
Storage Temperature Range
Tstg
TJ
–65 to +150
°
C
Operating Junction Temperature
200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
7.0
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 25 mAdc, IB = 0)
V(BR)CEO
16
—
—
Vdc
Collector–Emitter Breakdown Voltage
(IC = 25 mAdc, VBE = 0)
V(BR)CES
36
—
—
Vdc
Collector–Base Breakdown Voltage
(IC = 25 mAdc, IE = 0)
V(BR)CBO
36
—
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 5.0 mAdc, IC = 0)
V(BR)EBO
4.0
—
—
Vdc
Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0)
ICES
—
—
1.0
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 200 mAdc, VCE = 5.0 Vdc)
hFE
10
—
150
—
(continued)
Order this document
by MRF652/D
SEMICONDUCTOR TECHNICAL DATA
5.0 W, 512 MHz
RF POWER
TRANSISTORS
NPN SILICON
CASE 244–04, STYLE 1
MRF652
CASE 249–06, STYLE 1
MRF652S
REV 7
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF652S | RF POWER TRANSISTORS NPN SILICON |
| MRF653 | RF POWER TRANSISTOR NPN SILICON |
| MRF654 | RF POWER TRANSISTOR NPN SILICON |
| MRF658 | RF POWER TRANSISTOR NPN SILICON |
| MRF857D | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6522-70 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistor |
| MRF6522-70R3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6522--70R3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6522-70R3_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF6522-70R3_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。