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參數資料
| 型號： | MRF8P29300HR6 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-1230, CASE 375D-05, 4 PIN |
| 文件頁數： | 1/16頁 |
| 文件大?。?/td> | 1010K |
| 代理商： | MRF8P29300HR6 |
MRF8P29300HR6 MRF8P29300HSR6
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
RF Power transistors designed for applications operating at frequencies
between 2700 and 2900 MHz. These devices are suitable for use in pulsed
applications.
Typical Pulsed Performance: VDD =30 Volts,IDQ = 100 mA
Signal Type
Pout
(W)
f
(MHz)
Gps
(dB)
ηD
(%)
IRL
(dB)
Pulsed (100 μsec,
10% Duty Cycle)
320 Peak
2900
13.3
50.5
--17
Capable of Handling 10:1 VSWR, @ 32 Vdc, 2900 MHz, 320 Watts Peak
Power, 300 μsec, 10% Duty Cycle (3 dB Input Overdrive from Rated Pout)
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 VDD Operation
Integrated ESD Protection
Designed for Push--Pull Operation
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
RoHS Compliant
In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.
For R5 Tape and Reel option, see p. 15.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 61°C, 320 W Pulsed, 300 μsec Pulse Width, 10% Duty Cycle, 100 mA, 2900 MHz
Case Temperature 69°C, 320 W Pulsed, 500 μsec Pulse Width, 20% Duty Cycle, 100 mA, 2900 MHz
ZθJC
0.06
0.10
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Document Number: MRF8P29300H
Rev. 0, 2/2011
Freescale Semiconductor
Technical Data
2700--2900 MHz, 320 W, 30 V
LATERAL N--CHANNEL
BROADBAND
RF POWER MOSFETs
MRF8P29300HR6
MRF8P29300HSR6
CASE 375D--05, STYLE 1
NI--1230
MRF8P29300HR6
PARTS ARE PUSH--PULL
CASE 375E--04, STYLE 1
NI--1230S
MRF8P29300HSR6
(Top View)
RFoutA/VDSA
31
42 RFoutB/VDSB
RFinA/VGSA
RFinB/VGSB
Figure 1. Pin Connections
Freescale Semiconductor, Inc., 2011. All rights reserved.
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| MRF8P29300HSR5 | 功能描述:射頻MOSFET電源晶體管 HV8 300W 50V NI1230S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8P29300HSR6 | 功能描述:射頻MOSFET電源晶體管 HV8 300W 50V NI1230S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8P8300HR5 | 功能描述:射頻MOSFET電源晶體管 HV8-800 28V NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8P8300HR6 | 功能描述:射頻MOSFET電源晶體管 HV8-800 28V NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8P8300HSR5 | 功能描述:射頻MOSFET電源晶體管 HV8-800 28V NI1230HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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