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參數資料
| 型號： | MRF8P9040NR1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| 封裝： | ROHS COMPLIANT, PLASTIC, CASE 1486-03, WB-4, 4 PIN |
| 文件頁數： | 1/23頁 |
| 文件大小： | 822K |
| 代理商： | MRF8P9040NR1 |
MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA, W--CDMA and LTE base station applications with
frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for
all typical cellular base station modulation formats.
Driver Application — 900 MHz
Typical Single--Carrier W--CDMA Performance: VDD =28 Volts,IDQ =
320 mA, Pout = 4.0 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
Gps
(dB)
ηD
(%)
ACPR
(dBc)
920 MHz
18.9
--49.6
940 MHz
19.1
19.5
--50.1
960 MHz
19.1
19.9
--48.8
Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 63 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout), Designed for
Enhanced Ruggedness
Typical Pout @ 1 dB Compression Point
42 Watts CW
Driver Application — 700 MHz
Typical Single--Carrier W--CDMA Performance: VDD =28 Volts,IDQ =
320 mA, Pout = 4.0 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
Gps
(dB)
ηD
(%)
ACPR
(dBc)
728 MHz
19.9
18.7
--49.9
748 MHz
20.1
19.1
--50.0
768 MHz
20.0
19.5
--49.9
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
Designed for Digital Predistortion Error Correction Systems
Optimized for Doherty Applications
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.
Document Number: MRF8P9040N
Rev. 1, 10/2010
Freescale Semiconductor
Technical Data
728--960 MHz, 4.0 W AVG., 28 V
CDMA, W--CDMA, LTE
LATERAL N--CHANNEL
RF POWER MOSFETs
MRF8P9040NR1
MRF8P9040GNR1
MRF8P9040NBR1
(Top View)
RFoutA/VDSA
Figure 1. Pin Connections
RFoutB/VDSB
RFinA/VGSA
RFinB/VGSB
Note: Exposed backside of the package is
the source terminal for the transistors.
CASE 1484--04, STYLE 1
TO--272 WB--4
PLASTIC
MRF8P9040NBR1
CASE 1486--03, STYLE 1
TO--270 WB--4
PLASTIC
MRF8P9040NR1
32
41
CASE 1487--05, STYLE 1
TO--270 WB--4 GULL
PLASTIC
MRF8P9040GNR1
Freescale Semiconductor, Inc., 2010. All rights reserved.
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相關代理商/技術參數 |
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| MRF8P9210NR3 | 功能描述:射頻MOSFET電源晶體管 HV8 900MHz 63W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8P9300HR5 | 功能描述:射頻MOSFET電源晶體管 HV8-900 100W 28V NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8P9300HR6 | 功能描述:射頻MOSFET電源晶體管 HV8-900 100W 28V NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8P9300HR6_10 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs |
| MRF8P9300HSR5 | 功能描述:射頻MOSFET電源晶體管 HV8-900 100W 28V NI1230HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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